TY - GEN
T1 - Semiconductor-bonded III-V multijunction space solar cells
AU - Law, Daniel C.
AU - Bhusari, D. M.
AU - Mesropian, S.
AU - Boisvert, J. C.
AU - Hong, W. D.
AU - Boca, A.
AU - Larrabee, D. C.
AU - Fetzer, C. M.
AU - King, R. R.
AU - Karam, N. H.
PY - 2009
Y1 - 2009
N2 - Boeing-Spectrolab recently demonstrated monolithic 5-junction space solar cells using direct semiconductor-bonding technique. The direct-bonded 5-junction cells consist of (Al)GaInP, AlGa(In)As, Ga(In)As, GaInPAs, and GaIn(P)As subcells deposited on GaAs or Ge and InP substrates. Large-area, high-mechanical strength, and low-electrical resistance direct-bonded interface was achieved to support the high-efficiency solar cell structure. Preliminary 1-sun AM0 testing of the 5-junction cells showed encouraging results. One of the direct-bonded solar cell achieved an open-circuit-voltage of 4.7V, a short-circuit current-density of 11.7 mA/cm2, a fill factor of 0.79, and an efficiency of 31.7%. Spectral response measurement of the five-junction cell revealed excellent external quantum efficiency performance for each subcell and across the direct-bonded interface. Improvements in crystal growth and current density allocation among subcells can further raise the 1-sun, AM0 conversion efficiency of the direct-bonded 5-junction cell to 35 - 40%.
AB - Boeing-Spectrolab recently demonstrated monolithic 5-junction space solar cells using direct semiconductor-bonding technique. The direct-bonded 5-junction cells consist of (Al)GaInP, AlGa(In)As, Ga(In)As, GaInPAs, and GaIn(P)As subcells deposited on GaAs or Ge and InP substrates. Large-area, high-mechanical strength, and low-electrical resistance direct-bonded interface was achieved to support the high-efficiency solar cell structure. Preliminary 1-sun AM0 testing of the 5-junction cells showed encouraging results. One of the direct-bonded solar cell achieved an open-circuit-voltage of 4.7V, a short-circuit current-density of 11.7 mA/cm2, a fill factor of 0.79, and an efficiency of 31.7%. Spectral response measurement of the five-junction cell revealed excellent external quantum efficiency performance for each subcell and across the direct-bonded interface. Improvements in crystal growth and current density allocation among subcells can further raise the 1-sun, AM0 conversion efficiency of the direct-bonded 5-junction cell to 35 - 40%.
UR - http://www.scopus.com/inward/record.url?scp=77951533557&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77951533557&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2009.5411375
DO - 10.1109/PVSC.2009.5411375
M3 - Conference contribution
AN - SCOPUS:77951533557
SN - 9781424429509
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 2237
EP - 2239
BT - 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
T2 - 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Y2 - 7 June 2009 through 12 June 2009
ER -