Self-limiting oxidation for fabricating sub-5 nm silicon nanowires

H. I. Liu, D. K. Biegelsen, Fernando Ponce, N. M. Johnson, R. F W Pease

Research output: Contribution to journalArticle

256 Citations (Scopus)

Abstract

The ability to control structural dimensions below 5 nm is essential for a systematic study of the optical and electrical properties of Si nanostructures. A combination of electron beam lithography, NF3 reactive ion etching, and dry thermal oxidation has been successfully implemented to yield 2-nm-wide Si nanowires with aspect ratio of more than 100 to 1. With a sideview transmission electron microscopy technique, the oxidation progression of Si nanowires was characterized over a range of temperature from 800 to 1200°C. A previously reported self-limiting oxidation phenomenon was found to occur only for oxidation temperatures below 950°C. A preliminary model suggests that increase in the activation energy of oxidant diffusivity in a highly stressed oxide may be the main mechanism for slowing down the oxidation rate in the self-limiting regime.

Original languageEnglish (US)
Pages (from-to)1383-1385
Number of pages3
JournalApplied Physics Letters
Volume64
Issue number11
DOIs
StatePublished - 1994
Externally publishedYes

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nanowires
oxidation
silicon
progressions
diffusivity
aspect ratio
lithography
electrical properties
etching
electron beams
activation energy
optical properties
transmission electron microscopy
temperature
oxides
ions

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Liu, H. I., Biegelsen, D. K., Ponce, F., Johnson, N. M., & Pease, R. F. W. (1994). Self-limiting oxidation for fabricating sub-5 nm silicon nanowires. Applied Physics Letters, 64(11), 1383-1385. https://doi.org/10.1063/1.111914

Self-limiting oxidation for fabricating sub-5 nm silicon nanowires. / Liu, H. I.; Biegelsen, D. K.; Ponce, Fernando; Johnson, N. M.; Pease, R. F W.

In: Applied Physics Letters, Vol. 64, No. 11, 1994, p. 1383-1385.

Research output: Contribution to journalArticle

Liu, HI, Biegelsen, DK, Ponce, F, Johnson, NM & Pease, RFW 1994, 'Self-limiting oxidation for fabricating sub-5 nm silicon nanowires', Applied Physics Letters, vol. 64, no. 11, pp. 1383-1385. https://doi.org/10.1063/1.111914
Liu, H. I. ; Biegelsen, D. K. ; Ponce, Fernando ; Johnson, N. M. ; Pease, R. F W. / Self-limiting oxidation for fabricating sub-5 nm silicon nanowires. In: Applied Physics Letters. 1994 ; Vol. 64, No. 11. pp. 1383-1385.
@article{e03a88ce5dd84bc9b8e7cb705d321b7c,
title = "Self-limiting oxidation for fabricating sub-5 nm silicon nanowires",
abstract = "The ability to control structural dimensions below 5 nm is essential for a systematic study of the optical and electrical properties of Si nanostructures. A combination of electron beam lithography, NF3 reactive ion etching, and dry thermal oxidation has been successfully implemented to yield 2-nm-wide Si nanowires with aspect ratio of more than 100 to 1. With a sideview transmission electron microscopy technique, the oxidation progression of Si nanowires was characterized over a range of temperature from 800 to 1200°C. A previously reported self-limiting oxidation phenomenon was found to occur only for oxidation temperatures below 950°C. A preliminary model suggests that increase in the activation energy of oxidant diffusivity in a highly stressed oxide may be the main mechanism for slowing down the oxidation rate in the self-limiting regime.",
author = "Liu, {H. I.} and Biegelsen, {D. K.} and Fernando Ponce and Johnson, {N. M.} and Pease, {R. F W}",
year = "1994",
doi = "10.1063/1.111914",
language = "English (US)",
volume = "64",
pages = "1383--1385",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "11",

}

TY - JOUR

T1 - Self-limiting oxidation for fabricating sub-5 nm silicon nanowires

AU - Liu, H. I.

AU - Biegelsen, D. K.

AU - Ponce, Fernando

AU - Johnson, N. M.

AU - Pease, R. F W

PY - 1994

Y1 - 1994

N2 - The ability to control structural dimensions below 5 nm is essential for a systematic study of the optical and electrical properties of Si nanostructures. A combination of electron beam lithography, NF3 reactive ion etching, and dry thermal oxidation has been successfully implemented to yield 2-nm-wide Si nanowires with aspect ratio of more than 100 to 1. With a sideview transmission electron microscopy technique, the oxidation progression of Si nanowires was characterized over a range of temperature from 800 to 1200°C. A previously reported self-limiting oxidation phenomenon was found to occur only for oxidation temperatures below 950°C. A preliminary model suggests that increase in the activation energy of oxidant diffusivity in a highly stressed oxide may be the main mechanism for slowing down the oxidation rate in the self-limiting regime.

AB - The ability to control structural dimensions below 5 nm is essential for a systematic study of the optical and electrical properties of Si nanostructures. A combination of electron beam lithography, NF3 reactive ion etching, and dry thermal oxidation has been successfully implemented to yield 2-nm-wide Si nanowires with aspect ratio of more than 100 to 1. With a sideview transmission electron microscopy technique, the oxidation progression of Si nanowires was characterized over a range of temperature from 800 to 1200°C. A previously reported self-limiting oxidation phenomenon was found to occur only for oxidation temperatures below 950°C. A preliminary model suggests that increase in the activation energy of oxidant diffusivity in a highly stressed oxide may be the main mechanism for slowing down the oxidation rate in the self-limiting regime.

UR - http://www.scopus.com/inward/record.url?scp=21544449825&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=21544449825&partnerID=8YFLogxK

U2 - 10.1063/1.111914

DO - 10.1063/1.111914

M3 - Article

VL - 64

SP - 1383

EP - 1385

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 11

ER -