Abstract

We investigate the role of self-heating effects on the electrical characteristics of a silicon nanowire transistor using a 3-D Monte Carlo device simulator that includes self-consistent solution of the energy balance equations for both acoustic and optical phonons. We find that self-heating effects in the nanowire transistor lead to more than 10.35 % degradation in the ON-current for VG=VD=1 V.

Original languageEnglish (US)
Title of host publicationNanotechnology 2010
Subtitle of host publicationElectronics, Devices, Fabrication, MEMS, Fluidics and Computational - Technical Proceedings of the 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010
Pages45-48
Number of pages4
StatePublished - Nov 9 2010
EventNanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010 - Anaheim, CA, United States
Duration: Jun 21 2010Jun 24 2010

Publication series

NameNanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - Technical Proceedings of the 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010
Volume2

Other

OtherNanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010
CountryUnited States
CityAnaheim, CA
Period6/21/106/24/10

Keywords

  • Acoustic and optical phonons
  • Boltzmann transport equation
  • Phonon energy balance equations

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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  • Cite this

    Hossain, A., Raleva, K., Vasileska, D., & Goodnick, S. (2010). Self-heating effects in nanowire transistors. In Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - Technical Proceedings of the 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010 (pp. 45-48). (Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - Technical Proceedings of the 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010; Vol. 2).