Abstract

We investigate the role of self-heating effects on the electrical characteristics of a silicon nanowire transistor using a 3-D Monte Carlo device simulator that includes self-consistent solution of the energy balance equations for both acoustic and optical phonons. We find that self-heating effects in the nanowire transistor lead to more than 10.35 % degradation in the ON-current for VG=VD=1 V.

Original languageEnglish (US)
Title of host publicationNanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - Technical Proceedings of the 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010
Pages45-48
Number of pages4
Volume2
StatePublished - 2010
EventNanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010 - Anaheim, CA, United States
Duration: Jun 21 2010Jun 24 2010

Other

OtherNanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010
CountryUnited States
CityAnaheim, CA
Period6/21/106/24/10

Fingerprint

Nanowires
Transistors
Heating
Phonons
Energy balance
Simulators
Acoustics
Degradation
Silicon

Keywords

  • Acoustic and optical phonons
  • Boltzmann transport equation
  • Phonon energy balance equations

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Hossain, A., Raleva, K., Vasileska, D., & Goodnick, S. (2010). Self-heating effects in nanowire transistors. In Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - Technical Proceedings of the 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010 (Vol. 2, pp. 45-48)

Self-heating effects in nanowire transistors. / Hossain, A.; Raleva, K.; Vasileska, Dragica; Goodnick, Stephen.

Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - Technical Proceedings of the 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010. Vol. 2 2010. p. 45-48.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hossain, A, Raleva, K, Vasileska, D & Goodnick, S 2010, Self-heating effects in nanowire transistors. in Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - Technical Proceedings of the 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010. vol. 2, pp. 45-48, Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010, Anaheim, CA, United States, 6/21/10.
Hossain A, Raleva K, Vasileska D, Goodnick S. Self-heating effects in nanowire transistors. In Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - Technical Proceedings of the 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010. Vol. 2. 2010. p. 45-48
Hossain, A. ; Raleva, K. ; Vasileska, Dragica ; Goodnick, Stephen. / Self-heating effects in nanowire transistors. Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - Technical Proceedings of the 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010. Vol. 2 2010. pp. 45-48
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