TY - JOUR
T1 - Self-heating effects in nanoscale FD SOI devices
T2 - The role of the substrate, boundary conditions at various interfaces, and the dielectric material type for the BOX
AU - Vasileska, Dragica
AU - Raleva, Katerina
AU - Goodnick, Stephen
N1 - Funding Information:
Manuscript received August 14, 2009. First published October 30, 2009; current version published November 20, 2009. This work was supported in part by Arizona Institute for Nanoelectronics and in part by NSF under Contract ECCS-0901251. The review of this paper was arranged by Editor C. McAndrew. D. Vasileska and S. M. Goodnick are with Arizona State University, Tempe, AZ 85287-5706 USA. K. Raleva is with the Faculty of Electrical Engineering and Information Technologies, Sts. Cyril and Methodius University, Skopje 1000, Macedonia. Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/TED.2009.2032615
PY - 2009/12
Y1 - 2009/12
N2 - In this paper, we continue our investigations on selfheating effects in nanoscale fully depleted (FD) silicon-oninsulator (SOI) devices with emphasis on what is the appropriate simulation domain needed for accurate modeling. In that context, we examine the influence of the underlying substrate on the current degradation in the active channel region and what needs to be the proper boundary conditions at the source/drain and gate contacts and the artificial-side boundaries.We finally examine the self-heating effect when the BOX is made of SiO2, diamond, and AlN. As such, this paper helps one estimate the minimum and the maximum limits on-current degradation due to self-heating effects in FD SOI devices.
AB - In this paper, we continue our investigations on selfheating effects in nanoscale fully depleted (FD) silicon-oninsulator (SOI) devices with emphasis on what is the appropriate simulation domain needed for accurate modeling. In that context, we examine the influence of the underlying substrate on the current degradation in the active channel region and what needs to be the proper boundary conditions at the source/drain and gate contacts and the artificial-side boundaries.We finally examine the self-heating effect when the BOX is made of SiO2, diamond, and AlN. As such, this paper helps one estimate the minimum and the maximum limits on-current degradation due to self-heating effects in FD SOI devices.
KW - FD-SOI devices
KW - Particle-based device simulations
KW - Self-heating effects
KW - Thermal effects
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U2 - 10.1109/TED.2009.2032615
DO - 10.1109/TED.2009.2032615
M3 - Article
AN - SCOPUS:84857027822
VL - 56
SP - 3064
EP - 3071
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
SN - 0018-9383
IS - 12
M1 - 5306154
ER -