Abstract

In this paper, we continue our investigations on selfheating effects in nanoscale fully depleted (FD) silicon-oninsulator (SOI) devices with emphasis on what is the appropriate simulation domain needed for accurate modeling. In that context, we examine the influence of the underlying substrate on the current degradation in the active channel region and what needs to be the proper boundary conditions at the source/drain and gate contacts and the artificial-side boundaries.We finally examine the self-heating effect when the BOX is made of SiO2, diamond, and AlN. As such, this paper helps one estimate the minimum and the maximum limits on-current degradation due to self-heating effects in FD SOI devices.

Original languageEnglish (US)
Article number5306154
Pages (from-to)3064-3071
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume56
Issue number12
DOIs
StatePublished - Dec 1 2009

Keywords

  • FD-SOI devices
  • Particle-based device simulations
  • Self-heating effects
  • Thermal effects

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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