Abstract

In previous works we have investigated the degradation in the ON-current due to self-heating effects in 10 nm channel length nanowire transistors. In this work we examine the simultaneous influence of self-heating and random trapping effects on the magnitude of the ON current. Both positively and negatively charged single traps are considered in the analysis. Our investigations suggest that self-heating effects affect the ON-current in two ways: (1) by lowering the barrier at the source end of the channel, thus allowing for more carriers to go through, and (2) via the screening effect of the Coulomb potential. Namely, presence of more carriers in the channel means more screening and more screening means less impact due to the potential barrier of the negatively charged trap at the source injection barrier, but this at the same time means more self-heating.

Original languageEnglish (US)
Title of host publication2011 11th IEEE International Conference on Nanotechnology, NANO 2011
Pages1110-1113
Number of pages4
DOIs
StatePublished - Dec 1 2011
Event2011 11th IEEE International Conference on Nanotechnology, NANO 2011 - Portland, OR, United States
Duration: Aug 15 2011Aug 19 2011

Publication series

NameProceedings of the IEEE Conference on Nanotechnology
ISSN (Print)1944-9399
ISSN (Electronic)1944-9380

Other

Other2011 11th IEEE International Conference on Nanotechnology, NANO 2011
CountryUnited States
CityPortland, OR
Period8/15/118/19/11

Keywords

  • Random interface trap/impurity
  • Self-heating effects
  • Short range Coulomb interactions

ASJC Scopus subject areas

  • Bioengineering
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics

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  • Cite this

    Hossain, A., Vasileska, D., & Goodnick, S. (2011). Self-heating and short-range Coulomb interactions due to traps in a 10 nm channel length nanowire transistor. In 2011 11th IEEE International Conference on Nanotechnology, NANO 2011 (pp. 1110-1113). [6144513] (Proceedings of the IEEE Conference on Nanotechnology). https://doi.org/10.1109/NANO.2011.6144513