Abstract

In previous works we have investigated the degradation in the ON-current due to self-heating effects in 10 nm channel length nanowire transistors. In this work we examine the simultaneous influence of self-heating and random trapping effects on the magnitude of the ON current. Both positively and negatively charged single traps are considered in the analysis. Our investigations suggest that self-heating effects affect the ON-current in two ways: (1) by lowering the barrier at the source end of the channel, thus allowing for more carriers to go through, and (2) via the screening effect of the Coulomb potential. Namely, presence of more carriers in the channel means more screening and more screening means less impact due to the potential barrier of the negatively charged trap at the source injection barrier, but this at the same time means more self-heating.

Original languageEnglish (US)
Title of host publicationProceedings of the IEEE Conference on Nanotechnology
Pages1110-1113
Number of pages4
DOIs
StatePublished - 2011
Event2011 11th IEEE International Conference on Nanotechnology, NANO 2011 - Portland, OR, United States
Duration: Aug 15 2011Aug 19 2011

Other

Other2011 11th IEEE International Conference on Nanotechnology, NANO 2011
CountryUnited States
CityPortland, OR
Period8/15/118/19/11

Fingerprint

Coulomb interactions
Nanowires
Transistors
nanowires
transistors
traps
Heating
Screening
heating
screening
interactions
Coulomb potential
Degradation
trapping
injection
degradation

Keywords

  • Random interface trap/impurity
  • Self-heating effects
  • Short range Coulomb interactions

ASJC Scopus subject areas

  • Bioengineering
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics

Cite this

Self-heating and short-range Coulomb interactions due to traps in a 10 nm channel length nanowire transistor. / Hossain, Arif; Vasileska, Dragica; Goodnick, Stephen.

Proceedings of the IEEE Conference on Nanotechnology. 2011. p. 1110-1113 6144513.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hossain, A, Vasileska, D & Goodnick, S 2011, Self-heating and short-range Coulomb interactions due to traps in a 10 nm channel length nanowire transistor. in Proceedings of the IEEE Conference on Nanotechnology., 6144513, pp. 1110-1113, 2011 11th IEEE International Conference on Nanotechnology, NANO 2011, Portland, OR, United States, 8/15/11. https://doi.org/10.1109/NANO.2011.6144513
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AB - In previous works we have investigated the degradation in the ON-current due to self-heating effects in 10 nm channel length nanowire transistors. In this work we examine the simultaneous influence of self-heating and random trapping effects on the magnitude of the ON current. Both positively and negatively charged single traps are considered in the analysis. Our investigations suggest that self-heating effects affect the ON-current in two ways: (1) by lowering the barrier at the source end of the channel, thus allowing for more carriers to go through, and (2) via the screening effect of the Coulomb potential. Namely, presence of more carriers in the channel means more screening and more screening means less impact due to the potential barrier of the negatively charged trap at the source injection barrier, but this at the same time means more self-heating.

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