Self-heating and current degradation in 25 nm FD SOI devices with (100) and (110) crystallographic orientation

K. Raleva; Dragica Vasileska; Stephen Goodnick

doi:10.1109/IWCE.2012.6242855

Self-heating and current degradation in 25 nm FD SOI devices with (100) and (110) crystallographic orientation

K. Raleva, Dragica Vasileska, Stephen Goodnick

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this paper we present simulation results obtained with our electro-thermal particle-based device simulator for 25 nm fully depleted silicon-on-insulator devices with (100) and (110) crystallographic orientations. We also investigate the importance of the proper choice of the thermal conductivity model (which is particularly important for thin silicon films) in properly predicting the average maximum temperature and the maximum temperature in the hot spot which are important parameters regarding device reliability.

Original language	English (US)
Title of host publication	2012 15th International Workshop on Computational Electronics, IWCE 2012
DOIs	https://doi.org/10.1109/IWCE.2012.6242855
State	Published - Sep 27 2012
Event	2012 15th International Workshop on Computational Electronics, IWCE 2012 - Madison, WI, United States Duration: May 22 2012 → May 25 2012

Publication series

Name	2012 15th International Workshop on Computational Electronics, IWCE 2012

Other

Other	2012 15th International Workshop on Computational Electronics, IWCE 2012
Country/Territory	United States
City	Madison, WI
Period	5/22/12 → 5/25/12

Keywords

Silicon-On-Insulator devices
crystallographic orientations
electro-thermal particle based device simulation
thermal conductivity

ASJC Scopus subject areas

Computational Theory and Mathematics
Electrical and Electronic Engineering

Access to Document

10.1109/IWCE.2012.6242855

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Self-heating and current degradation in 25 nm FD SOI devices with (100) and (110) crystallographic orientation. / Raleva, K.; Vasileska, Dragica ; Goodnick, Stephen.
2012 15th International Workshop on Computational Electronics, IWCE 2012. 2012. 6242855 (2012 15th International Workshop on Computational Electronics, IWCE 2012).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Raleva, K, Vasileska, D & Goodnick, S 2012, Self-heating and current degradation in 25 nm FD SOI devices with (100) and (110) crystallographic orientation. in 2012 15th International Workshop on Computational Electronics, IWCE 2012., 6242855, 2012 15th International Workshop on Computational Electronics, IWCE 2012, 2012 15th International Workshop on Computational Electronics, IWCE 2012, Madison, WI, United States, 5/22/12. https://doi.org/10.1109/IWCE.2012.6242855

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Self-heating and current degradation in 25 nm FD SOI devices with (100) and (110) crystallographic orientation

Abstract

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Keywords

ASJC Scopus subject areas

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