Abstract
Heterostructure engineering of atomically thin two-dimensional materials offers an exciting opportunity to fabricate atomically sharp interfaces for highly tunable electronic and optoelectronic devices. Here, we demonstrate abrupt interface between two completely dissimilar material systems, i.e, GaTe-MoS2 p-n heterojunction transistors, where the resulting device possesses unique electronic properties and self-driven photoelectric characteristics. Fabricated heterostructure transistors exhibit forward biased rectifying behavior where the transport is ambipolar with both electron and hole carriers contributing to the overall transport. Under illumination, photoexcited electron-hole pairs are readily separated by large built-in potential formed at the GaTe-MoS2 interface efficiently generating self-driven photocurrent within
Original language | English (US) |
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Pages (from-to) | 2533-2539 |
Number of pages | 7 |
Journal | ACS Applied Materials and Interfaces |
Volume | 8 |
Issue number | 4 |
DOIs | |
State | Published - Feb 3 2016 |
Keywords
- ambipolar behavior
- dissimilar material systems
- p-n heterojunction
- rectification
- self-driven photocurrent
ASJC Scopus subject areas
- Materials Science(all)