TY - JOUR
T1 - Self-Driven Photodetector and Ambipolar Transistor in Atomically Thin GaTe-MoS2 p-n vdW Heterostructure
AU - Yang, Shengxue
AU - Wang, Cong
AU - Ataca, Can
AU - Li, Yan
AU - Chen, Hui
AU - Cai, Hui
AU - Suslu, Aslihan
AU - Grossman, Jeffrey C.
AU - Jiang, Chengbao
AU - Liu, Qian
AU - Tongay, Sefaattin
N1 - Publisher Copyright:
© 2016 American Chemical Society.
PY - 2016/2/3
Y1 - 2016/2/3
N2 - Heterostructure engineering of atomically thin two-dimensional materials offers an exciting opportunity to fabricate atomically sharp interfaces for highly tunable electronic and optoelectronic devices. Here, we demonstrate abrupt interface between two completely dissimilar material systems, i.e, GaTe-MoS2 p-n heterojunction transistors, where the resulting device possesses unique electronic properties and self-driven photoelectric characteristics. Fabricated heterostructure transistors exhibit forward biased rectifying behavior where the transport is ambipolar with both electron and hole carriers contributing to the overall transport. Under illumination, photoexcited electron-hole pairs are readily separated by large built-in potential formed at the GaTe-MoS2 interface efficiently generating self-driven photocurrent within <10 ms. Overall results suggest that abrupt interfaces between vastly different material systems with different crystal symmetries still allow efficient charge transfer mechanisms at the interface and are attractive for photoswitch, photodetector, and photovoltaic applications because of large built-in potential at the interface.
AB - Heterostructure engineering of atomically thin two-dimensional materials offers an exciting opportunity to fabricate atomically sharp interfaces for highly tunable electronic and optoelectronic devices. Here, we demonstrate abrupt interface between two completely dissimilar material systems, i.e, GaTe-MoS2 p-n heterojunction transistors, where the resulting device possesses unique electronic properties and self-driven photoelectric characteristics. Fabricated heterostructure transistors exhibit forward biased rectifying behavior where the transport is ambipolar with both electron and hole carriers contributing to the overall transport. Under illumination, photoexcited electron-hole pairs are readily separated by large built-in potential formed at the GaTe-MoS2 interface efficiently generating self-driven photocurrent within <10 ms. Overall results suggest that abrupt interfaces between vastly different material systems with different crystal symmetries still allow efficient charge transfer mechanisms at the interface and are attractive for photoswitch, photodetector, and photovoltaic applications because of large built-in potential at the interface.
KW - ambipolar behavior
KW - dissimilar material systems
KW - p-n heterojunction
KW - rectification
KW - self-driven photocurrent
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U2 - 10.1021/acsami.5b10001
DO - 10.1021/acsami.5b10001
M3 - Article
AN - SCOPUS:84958206191
SN - 1944-8244
VL - 8
SP - 2533
EP - 2539
JO - ACS Applied Materials and Interfaces
JF - ACS Applied Materials and Interfaces
IS - 4
ER -