Self-Driven Photodetector and Ambipolar Transistor in Atomically Thin GaTe-MoS2 p-n vdW Heterostructure

Shengxue Yang, Cong Wang, Can Ataca, Yan Li, Hui Chen, Hui Cai, Aslihan Suslu, Jeffrey C. Grossman, Chengbao Jiang, Qian Liu, Sefaattin Tongay

Research output: Contribution to journalArticle

81 Scopus citations

Abstract

Heterostructure engineering of atomically thin two-dimensional materials offers an exciting opportunity to fabricate atomically sharp interfaces for highly tunable electronic and optoelectronic devices. Here, we demonstrate abrupt interface between two completely dissimilar material systems, i.e, GaTe-MoS2 p-n heterojunction transistors, where the resulting device possesses unique electronic properties and self-driven photoelectric characteristics. Fabricated heterostructure transistors exhibit forward biased rectifying behavior where the transport is ambipolar with both electron and hole carriers contributing to the overall transport. Under illumination, photoexcited electron-hole pairs are readily separated by large built-in potential formed at the GaTe-MoS2 interface efficiently generating self-driven photocurrent within

Original languageEnglish (US)
Pages (from-to)2533-2539
Number of pages7
JournalACS Applied Materials and Interfaces
Volume8
Issue number4
DOIs
StatePublished - Feb 3 2016

Keywords

  • ambipolar behavior
  • dissimilar material systems
  • p-n heterojunction
  • rectification
  • self-driven photocurrent

ASJC Scopus subject areas

  • Materials Science(all)

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    Yang, S., Wang, C., Ataca, C., Li, Y., Chen, H., Cai, H., Suslu, A., Grossman, J. C., Jiang, C., Liu, Q., & Tongay, S. (2016). Self-Driven Photodetector and Ambipolar Transistor in Atomically Thin GaTe-MoS2 p-n vdW Heterostructure. ACS Applied Materials and Interfaces, 8(4), 2533-2539. https://doi.org/10.1021/acsami.5b10001