Self-consistent treatment of quantum transport in 10 nm FinFET using Contact Block Reduction (CBR) method

H. Khan, D. Mamaluy, Dragica Vasileska

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

A fully quantum mechanical approach must be utilized to investigate the characteristics of nanoscale semiconductor devices and capture the essential physics with high accuracy. In this work a very efficient quantum mechanical transport simulator based on Contact Block Reduction (CBR) method is used to analyze the behavior of 10 nm FinFET device in the quasi-ballistic regime of operation. Simulation results depict the transformation of multiple channels into a single merged channel across the fin as the fin width is reduced gradually. Also we observe that short channel effects can be minimized by reducing the fin thickness, which is evident from the device transfer characteristics for different fin thickness presented in this paper. A comparison of simulation results with the available experimental data is presented. An optimized 10 nm gate length FinFET structure is suggested.

Original languageEnglish (US)
Pages (from-to)77-80
Number of pages4
JournalJournal of Computational Electronics
Volume6
Issue number1-3
DOIs
StatePublished - Sep 1 2007

Keywords

  • Contact Block Reduction method
  • FinFET
  • Quantum transport

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Modeling and Simulation
  • Electrical and Electronic Engineering

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