Abstract

In this paper we present state of the art modeling of coupled electron-phonon transport in nanoscale CMOS SOI devices, in order to elucidate from a microscopic standpoint the role of device dimensions, boundary conditions and various material strategies on self-heating in this technology.

Original languageEnglish (US)
Title of host publicationProceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009
DOIs
StatePublished - Oct 27 2009
Event2009 13th International Workshop on Computational Electronics, IWCE 2009 - Beijing, China
Duration: May 27 2009May 29 2009

Publication series

NameProceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009

Other

Other2009 13th International Workshop on Computational Electronics, IWCE 2009
CountryChina
CityBeijing
Period5/27/095/29/09

Keywords

  • Hot phonons
  • Particle-based device simulations
  • SOI devices
  • Self-heating

ASJC Scopus subject areas

  • Computational Mechanics
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Vasileska, D., Goodnick, S., & Raleva, K. (2009). Self-consistent simulation of heating effects in nanoscale devices. In Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009 [5091146] (Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009). https://doi.org/10.1109/IWCE.2009.5091146