Abstract

We demonstrate a self-consistent numerical scheme for simulating an electronic device which contains active defects. As a specific case, we consider copper defects in cadmium telluride solar cells. The presence of copper has been shown experimentally to play a crucial role in predicting device performance. The primary source of this copper is migration away from the back contact during annealing, which likely occurs predominantly along grain boundaries. We introduce a mathematical scheme for simulating this effect in 2D and explain the numerical implementation of the system. Finally, we will give numerical results comparing our results to known 1D simulations to demonstrate the accuracy of the solver and then show results unique to the 2D case.

Original languageEnglish (US)
Article number035704
JournalJournal of Applied Physics
Volume118
Issue number3
DOIs
StatePublished - Jul 21 2015

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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