Self-consistent quantum mechanical treatment of the ballistic transport in 10 nm FinFET devices using CBR method

Hasanur R. Khan, Denis Mamaluy, Dragica Vasileska

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

As device size shrinks towards 10 nm feature size, ballistic transport and quantum interference effects are expected to play significant role in the operation of these nanoscale devices. It is, therefore, imperative to have a first principles device simulation tool that will take these effects into account. In this work, a fully quantum mechanical simulator based on Contact Block Reduction (CBR) method has been used to investigate the behavior of 10nm FinFET device in the ballistic regime of operation. Simulation results show the transformation of multiple channels into a single merged channel across the fin as the fin width is reduced gradually. Also we observe that short channel effects can be minimized by reducing the fin thickness which is evident from the device transfer characteristics for different fin thickness presented in this paper.

Original languageEnglish (US)
Title of host publication2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings
Pages54-57
Number of pages4
StatePublished - Dec 8 2006
Event2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings - Boston, MA, United States
Duration: May 7 2006May 11 2006

Publication series

Name2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings
Volume1

Other

Other2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings
CountryUnited States
CityBoston, MA
Period5/7/065/11/06

Keywords

  • CBR method
  • FinFET
  • Quantum transport

ASJC Scopus subject areas

  • Engineering(all)

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