Self-assembly of defect-free nanostripe arrays on B-doped Si(001)

Ivan Ermanoski, Norman C. Bartelt, Garry L. Kellogg

    Research output: Contribution to journalArticle

    2 Scopus citations

    Abstract

    We have developed a method to grow large, self-assembled, defect-free arrays of vacancy or adatom stripes on atomically flat, boron-doped Si(001)-(2×1). The subnanometer-high stripes form between ∼870 and 990°C, with a spacing that depends on temperature. Si deposition is used to prevent sublimation-induced defect formation and to allow time for ordering via surface diffusion. Ordering mechanisms, observed in real time by low-energy electron microscopy, include island nucleation and growth, longitudinal splitting, and coarsening. At formation temperatures, the arrays are only stable when the area fractions of vacancy (θv) or adatom stripes (θa) are ∼1/2, consistent with stress domain theory predictions. At room temperature, arrays are preserved indefinitely and are a potential template for nanowire growth.

    Original languageEnglish (US)
    Article number205432
    JournalPhysical Review B - Condensed Matter and Materials Physics
    Volume83
    Issue number20
    DOIs
    StatePublished - May 31 2011

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

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