Self-assembling Ge(Si)/Si(100) quantum dots

Research output: Contribution to journalArticle

75 Scopus citations

Abstract

The morphological evolution of self-assembled epitaxial quantum dots on Si(100) is reviewed. This intensely investigated material system continues to provide fundamental insight guiding the growth of nanostructured electronic materials. Self-assembled quantum dots are faceted, three-dimensional islands which grow atop a planar wetting layer. Pure Ge growth at higher substrate temperatures results in narrower island size distributions but activates additional strain-relief mechanisms which will alter the optical and electronic properties of the dots. Optical and electrical characterization has shown that electrons and holes are confined to different regions of the dot. This results in a spatially indirect, type II recombination mechanism. Emerging device applications which exploit properties of these nanoscale Ge islands are discussed.

Original languageEnglish (US)
Pages (from-to)975-987
Number of pages13
JournalIEEE Journal of Quantum Electronics
Volume38
Issue number8
DOIs
StatePublished - Aug 1 2002

Keywords

  • Epitaxial growth
  • Nanotechnology
  • Photoluminescence
  • Quantum dots
  • Semiconductor epitaxial dots

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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