Self-assembled monolayer resists and nanoscale lithography of silicon dioxide thin films by chemically enhanced vapor etching (CEVE)

M. Pan, M. Yun, Michael Kozicki, T. K. Whidden

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

We report on the use of electron-beam exposed monolayers of undecylenic acid in the etch rate enhancement of silicon dioxide films in HF vapor for the formation of nanoscale features in the oxide. Variations of the etching characteristics with electron beam parameters are examined and the results analyzed in terms of proposed models of the etching mechanism. Apparent variations in the relative concentrations of etch initiator with the thermal history of the samples prior to etching provides support for the dominant etch initiator within this system as the carboxylic acid moiety bound at the oxide surface. Other variations in the etching characteristics are discussed in terms of differences in localized concentrations of hydrocarbon crosslinks and the effect that this has upon the etch initiation. The process has been employed in the production of features in silicon dioxide surface masks with sizes down to 50 nm.

Original languageEnglish (US)
Pages (from-to)369-376
Number of pages8
JournalSuperlattices and Microstructures
Volume20
Issue number3
StatePublished - Oct 1996

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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