Self-assembled indium nitride nanocolumns grown by molecular beam epitaxy

H. M. Ng, R. Liu, Fernando Ponce

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Indium nitride (InN) self-assembled nanocolumns were grown on (0001) sapphire substrates using plasma-assisted molecular beam epitaxy. The growth behavior of the nanocolumns was found to be sensitive to the In/N ratio, transitioning to a two-dimensional growth mode at higher In fluxes. We characterized the structural and optical properties of the nanocolumns and compared them to those of InN films. The nanocolumns were found to have the wurtzite crystal structure. Comparing the optical properties, the photoluminescence emission from the nanocolumns was weaker in intensity and the peak was shifted to higher energy (1.11 eV) compared to the InN films (0.83 eV).

Original languageEnglish (US)
Title of host publicationProceedings - Electrochemical Society
EditorsH.M. Ng, A.G. Baca
Pages372-379
Number of pages8
Volume6
StatePublished - 2004
EventState-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia - Honolulu, HI, United States
Duration: Oct 3 2004Oct 8 2004

Other

OtherState-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia
CountryUnited States
CityHonolulu, HI
Period10/3/0410/8/04

ASJC Scopus subject areas

  • Engineering(all)

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    Ng, H. M., Liu, R., & Ponce, F. (2004). Self-assembled indium nitride nanocolumns grown by molecular beam epitaxy. In H. M. Ng, & A. G. Baca (Eds.), Proceedings - Electrochemical Society (Vol. 6, pp. 372-379)