Self-assembled Bismuth Selenide (Bi 2 Se 3 ) quantum dots grown by molecular beam epitaxy

Marcel S. Claro, Ido Levy, Abhinandan Gangopadhyay, David Smith, Maria C. Tamargo

Research output: Contribution to journalArticle

Abstract

We report the growth of self-assembled Bi 2 Se 3 quantum dots (QDs) by molecular beam epitaxy on GaAs substrates using the droplet epitaxy technique. The QD formation occurs after anneal of Bismuth droplets under Selenium flux. Characterization by atomic force microscopy, scanning electron microscopy, X-ray diffraction, high-resolution transmission electron microscopy and X-ray reflectance spectroscopy is presented. Raman spectra confirm the QD quality. The quantum dots are crystalline, with hexagonal shape, and have average dimensions of 12-nm height (12 quintuple layers) and 46-nm width, and a density of 8.5 × 10 9 cm −2 . This droplet growth technique provides a means to produce topological insulator QDs in a reproducible and controllable way, providing convenient access to a promising quantum material with singular spin properties.

Original languageEnglish (US)
Article number3370
JournalScientific reports
Volume9
Issue number1
DOIs
StatePublished - Dec 1 2019

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Quantum Dots
Bismuth
Atomic Force Microscopy
Growth
Selenium
Transmission Electron Microscopy
X-Ray Diffraction
Electron Scanning Microscopy
Self Report
Spectrum Analysis
X-Rays

ASJC Scopus subject areas

  • General

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Self-assembled Bismuth Selenide (Bi 2 Se 3 ) quantum dots grown by molecular beam epitaxy . / Claro, Marcel S.; Levy, Ido; Gangopadhyay, Abhinandan; Smith, David; Tamargo, Maria C.

In: Scientific reports, Vol. 9, No. 1, 3370, 01.12.2019.

Research output: Contribution to journalArticle

Claro, Marcel S. ; Levy, Ido ; Gangopadhyay, Abhinandan ; Smith, David ; Tamargo, Maria C. / Self-assembled Bismuth Selenide (Bi 2 Se 3 ) quantum dots grown by molecular beam epitaxy In: Scientific reports. 2019 ; Vol. 9, No. 1.
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