Self-aligned lateral field excitation film acoustic resonator with very large electromechanical coupling

Wei Pang; Hongyu Yu; Jae Wan Kwon; Hao Zhang; Eun Sok Kim

Self-aligned lateral field excitation film acoustic resonator with very large electromechanical coupling

Wei Pang, Hongyu Yu, Jae Wan Kwon, Hao Zhang, Eun Sok Kim

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This paper describes a self-aligned lateral-field excitation (LFE) film bulk acoustic resonator (FBAR) that exhibits an electromechanical coupling coefficient (K₁₂) of 10% at 4.1 GHz, albeit a relatively low Q of 35. The unique features of this resonator include (1) improved energy trapping structure that does not require an electrode gap close to micron and (2) a simple two-mask self-aligned fabrication process that eliminates misalignment between the piezoelectric ZnO and the metal electrode.

Original language	English (US)
Title of host publication	Proceedings of the IEEE International Frequency Control Symposium and Exposition
Editors	M.P. Yuhas
Pages	558-561
Number of pages	4
State	Published - 2005
Externally published	Yes
Event	2004 IEEE International Frequency Control Symposium and Exposition. A Conference of the IEEE Ultrasonics, Ferroelectrics, and Frequency Control Society (UFFC-S) - Montreal, Canada Duration: Aug 23 2004 → Aug 27 2004

Other

Other	2004 IEEE International Frequency Control Symposium and Exposition. A Conference of the IEEE Ultrasonics, Ferroelectrics, and Frequency Control Society (UFFC-S)
Country/Territory	Canada
City	Montreal
Period	8/23/04 → 8/27/04

ASJC Scopus subject areas

General Engineering

Cite this

Pang, W, Yu, H, Kwon, JW, Zhang, H & Kim, ES 2005, Self-aligned lateral field excitation film acoustic resonator with very large electromechanical coupling. in MP Yuhas (ed.), Proceedings of the IEEE International Frequency Control Symposium and Exposition., P1FC-R-1, pp. 558-561, 2004 IEEE International Frequency Control Symposium and Exposition. A Conference of the IEEE Ultrasonics, Ferroelectrics, and Frequency Control Society (UFFC-S), Montreal, Canada, 8/23/04.

@inproceedings{6ec6e405893e47fab7b70cbcf8bc85fc,

title = "Self-aligned lateral field excitation film acoustic resonator with very large electromechanical coupling",

abstract = "This paper describes a self-aligned lateral-field excitation (LFE) film bulk acoustic resonator (FBAR) that exhibits an electromechanical coupling coefficient (K12) of 10% at 4.1 GHz, albeit a relatively low Q of 35. The unique features of this resonator include (1) improved energy trapping structure that does not require an electrode gap close to micron and (2) a simple two-mask self-aligned fabrication process that eliminates misalignment between the piezoelectric ZnO and the metal electrode.",

author = "Wei Pang and Hongyu Yu and Kwon, {Jae Wan} and Hao Zhang and Kim, {Eun Sok}",

year = "2005",

language = "English (US)",

pages = "558--561",

editor = "M.P. Yuhas",

booktitle = "Proceedings of the IEEE International Frequency Control Symposium and Exposition",

note = "2004 IEEE International Frequency Control Symposium and Exposition. A Conference of the IEEE Ultrasonics, Ferroelectrics, and Frequency Control Society (UFFC-S) ; Conference date: 23-08-2004 Through 27-08-2004",

}

TY - GEN

T1 - Self-aligned lateral field excitation film acoustic resonator with very large electromechanical coupling

AU - Pang, Wei

AU - Yu, Hongyu

AU - Kwon, Jae Wan

AU - Zhang, Hao

AU - Kim, Eun Sok

PY - 2005

Y1 - 2005

N2 - This paper describes a self-aligned lateral-field excitation (LFE) film bulk acoustic resonator (FBAR) that exhibits an electromechanical coupling coefficient (K12) of 10% at 4.1 GHz, albeit a relatively low Q of 35. The unique features of this resonator include (1) improved energy trapping structure that does not require an electrode gap close to micron and (2) a simple two-mask self-aligned fabrication process that eliminates misalignment between the piezoelectric ZnO and the metal electrode.

AB - This paper describes a self-aligned lateral-field excitation (LFE) film bulk acoustic resonator (FBAR) that exhibits an electromechanical coupling coefficient (K12) of 10% at 4.1 GHz, albeit a relatively low Q of 35. The unique features of this resonator include (1) improved energy trapping structure that does not require an electrode gap close to micron and (2) a simple two-mask self-aligned fabrication process that eliminates misalignment between the piezoelectric ZnO and the metal electrode.

UR - http://www.scopus.com/inward/record.url?scp=28744446368&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=28744446368&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:28744446368

SP - 558

EP - 561

BT - Proceedings of the IEEE International Frequency Control Symposium and Exposition

A2 - Yuhas, M.P.

T2 - 2004 IEEE International Frequency Control Symposium and Exposition. A Conference of the IEEE Ultrasonics, Ferroelectrics, and Frequency Control Society (UFFC-S)

Y2 - 23 August 2004 through 27 August 2004

ER -

Self-aligned lateral field excitation film acoustic resonator with very large electromechanical coupling

Abstract

Other

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this