Abstract

A novel method to electrically isolate grafted integrated GaAs devices from a conductive host substrate is demonstrated. An array of GaAs MESFET's is fabricated on a GaAs substrate and transferred to a Si substrate using a substrate removal process. The MESFET's contain a buried oxide layer under the channel region of each transistor that is formed by the thermal oxidation of AlAs. The purpose of this oxide layer is to provide electrical isolation from the conductive host substrate. Electrical evaluations are performed that show the transistors are fully functional after the oxidation and transfer processes and that the buried oxide does provide electrical isolation from the conductive host substrate.

Original languageEnglish (US)
Pages (from-to)138-140
Number of pages3
JournalIEEE Electron Device Letters
Volume18
Issue number4
DOIs
StatePublished - Apr 1 1997

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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