TY - JOUR
T1 - Selective nucleation and controlled growth
T2 - Quantum dots on metal, insulator and semiconductor surfaces
AU - Venables, J. A.
AU - Bennett, Peter
AU - Brune, H.
AU - Drucker, Jeffery
AU - Harding, J. H.
AU - Dobson, P.
AU - Oliver, R. A.
AU - Stoneham, A. M.
PY - 2003/2/15
Y1 - 2003/2/15
N2 - Nucleation and growth models are well developed for nucleation on homogeneous substrates, and they can typically be described in terms of three energy parameters. Nucleation on substrates containing point-defect traps has been investigated, at the cost of introducing more energy parameters. This paper outlines the quantitative description of such growth models, using rate and rate-diffusion equations, in terms of energies for individual surface processes, with examples taken from metal- metal, metal-insulator and semiconductor growth. The challenge to modelling is to describe the large range of length and time-scales in thin-film fabrication and degradation, without relying on too many (unknown) material parameters, which often occur in combination. Separating them into elementary processes often proves to be a challenge. One typically requires selective nucleation using patterned substrates, in combination with controlled, self-organized, growth for reliable nanotechnology. Reconstructed semiconductor surfaces offer both a further challenge to modelling and an opportunity for future technology; these paradoxes are discussed briefly.
AB - Nucleation and growth models are well developed for nucleation on homogeneous substrates, and they can typically be described in terms of three energy parameters. Nucleation on substrates containing point-defect traps has been investigated, at the cost of introducing more energy parameters. This paper outlines the quantitative description of such growth models, using rate and rate-diffusion equations, in terms of energies for individual surface processes, with examples taken from metal- metal, metal-insulator and semiconductor growth. The challenge to modelling is to describe the large range of length and time-scales in thin-film fabrication and degradation, without relying on too many (unknown) material parameters, which often occur in combination. Separating them into elementary processes often proves to be a challenge. One typically requires selective nucleation using patterned substrates, in combination with controlled, self-organized, growth for reliable nanotechnology. Reconstructed semiconductor surfaces offer both a further challenge to modelling and an opportunity for future technology; these paradoxes are discussed briefly.
KW - Metal growth
KW - Nucleation and growth
KW - Patterned substrates
KW - Rate equations
KW - Rate-diffusion equations
KW - Semiconductor growth
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U2 - 10.1098/rsta.2002.1130
DO - 10.1098/rsta.2002.1130
M3 - Article
C2 - 12639386
AN - SCOPUS:0141991928
SN - 1364-503X
VL - 361
SP - 311
EP - 329
JO - Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences
JF - Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences
IS - 1803
ER -