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Selective growth of GaN and Al 0.2Ga 0.8N on GaN/AlN/6H-SiC (0001) multilayer substrates via organometallic vapor-phase epitaxy
O. H. Nam, M. D. Bremser, B. L. Ward, Robert Nemanich, R. F. Davis
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
18
Scopus
citations