Selective growth of GaN and Al 0.2Ga 0.8N on GaN/AlN/6H-SiC (0001) multilayer substrates via organometallic vapor-phase epitaxy

O. H. Nam, M. D. Bremser, B. L. Ward, Robert Nemanich, R. F. Davis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

18 Scopus citations

Abstract

The selective growth of GaN and Al 0.2Ga 0.8N has been conducted on stripe and circular patterned GaN/AlN/6H-SiC(0001) multilayer substrates. Growth morphologies on stripe patterns changed with the widths of stripes and the now rate of TEG. No ridge growth was observed along the edges of the stripe patterns, and the (0001) top facets were very smooth. Uniform hexagonal pyramid arrays of undoped GaN and Si-doped GaN were successfully grown on 5μm circular patterns. Field emission measurement of a Si-doped GaN hexagonal pyramid array exhibited a turn-on field of 25V/μm for an emission current of 10.8nA at an anode-to-sample distance of 27μm.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsF.A. Ponce, T.D. Moustakas, I. Akasaki, B.A. Monemar
PublisherMaterials Research Society
Pages107-112
Number of pages6
Volume449
StatePublished - 1997
Externally publishedYes
EventProceedings of the 1996 MRS Fall Symposium - Boston, MA, USA
Duration: Dec 2 1996Dec 6 1996

Other

OtherProceedings of the 1996 MRS Fall Symposium
CityBoston, MA, USA
Period12/2/9612/6/96

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Nam, O. H., Bremser, M. D., Ward, B. L., Nemanich, R., & Davis, R. F. (1997). Selective growth of GaN and Al 0.2Ga 0.8N on GaN/AlN/6H-SiC (0001) multilayer substrates via organometallic vapor-phase epitaxy In F. A. Ponce, T. D. Moustakas, I. Akasaki, & B. A. Monemar (Eds.), Materials Research Society Symposium - Proceedings (Vol. 449, pp. 107-112). Materials Research Society.