Abstract
Two aspects of the selective epitaxial growth of Si and Si1-xGex will be discussed. First the facet formation as dependent on the oxide wall orientation and the lateral size of oxide openings. Besides the often cited {111}, {113} and {110} planes additional planes were observed, the {119} and the {0 1 12} planes. Second, the reduction of misfit dislocation density by reducing the area of the pads allows strained Si1-xGex layers to grow much thicker than the critical thickness. As an application for the latter the electroluminescence of forward biased PIN diodes with strained Si0.80Ge0.20/Si(001) will be discussed as being dependent on the thickness of the SiGe layer. It was found that in thicker strained samples the band edge electroluminescence persists up to room temperature. Quantitative modelling of the electroluminescence could explain the temperature and SiGe thickness dependence of the electroluminescence.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 166-169 |
| Number of pages | 4 |
| Journal | Materials Science and Engineering B |
| Volume | 51 |
| Issue number | 1-3 |
| State | Published - Feb 27 1998 |
| Externally published | Yes |
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Keywords
- Electroluminescence
- Facets
- Selective epitaxy
- Strained SiGe
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Selective epitaxial growth of strained SiGe/Si for optoelectronic devices. / Vescan, L.; Stoica, T.; Goryll, Michael; Grimm, K.
In: Materials Science and Engineering B, Vol. 51, No. 1-3, 27.02.1998, p. 166-169.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Selective epitaxial growth of strained SiGe/Si for optoelectronic devices
AU - Vescan, L.
AU - Stoica, T.
AU - Goryll, Michael
AU - Grimm, K.
PY - 1998/2/27
Y1 - 1998/2/27
N2 - Two aspects of the selective epitaxial growth of Si and Si1-xGex will be discussed. First the facet formation as dependent on the oxide wall orientation and the lateral size of oxide openings. Besides the often cited {111}, {113} and {110} planes additional planes were observed, the {119} and the {0 1 12} planes. Second, the reduction of misfit dislocation density by reducing the area of the pads allows strained Si1-xGex layers to grow much thicker than the critical thickness. As an application for the latter the electroluminescence of forward biased PIN diodes with strained Si0.80Ge0.20/Si(001) will be discussed as being dependent on the thickness of the SiGe layer. It was found that in thicker strained samples the band edge electroluminescence persists up to room temperature. Quantitative modelling of the electroluminescence could explain the temperature and SiGe thickness dependence of the electroluminescence.
AB - Two aspects of the selective epitaxial growth of Si and Si1-xGex will be discussed. First the facet formation as dependent on the oxide wall orientation and the lateral size of oxide openings. Besides the often cited {111}, {113} and {110} planes additional planes were observed, the {119} and the {0 1 12} planes. Second, the reduction of misfit dislocation density by reducing the area of the pads allows strained Si1-xGex layers to grow much thicker than the critical thickness. As an application for the latter the electroluminescence of forward biased PIN diodes with strained Si0.80Ge0.20/Si(001) will be discussed as being dependent on the thickness of the SiGe layer. It was found that in thicker strained samples the band edge electroluminescence persists up to room temperature. Quantitative modelling of the electroluminescence could explain the temperature and SiGe thickness dependence of the electroluminescence.
KW - Electroluminescence
KW - Facets
KW - Selective epitaxy
KW - Strained SiGe
UR - http://www.scopus.com/inward/record.url?scp=0032001139&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0032001139&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0032001139
VL - 51
SP - 166
EP - 169
JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
SN - 0921-5107
IS - 1-3
ER -