Selective epitaxial growth of strained SiGe/Si for optoelectronic devices

L. Vescan, T. Stoica, M. Goryll, K. Grimm

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

Two aspects of the selective epitaxial growth of Si and Si1-xGex will be discussed. First the facet formation as dependent on the oxide wall orientation and the lateral size of oxide openings. Besides the often cited {111}, {113} and {110} planes additional planes were observed, the {119} and the {0 1 12} planes. Second, the reduction of misfit dislocation density by reducing the area of the pads allows strained Si1-xGex layers to grow much thicker than the critical thickness. As an application for the latter the electroluminescence of forward biased PIN diodes with strained Si0.80Ge0.20/Si(001) will be discussed as being dependent on the thickness of the SiGe layer. It was found that in thicker strained samples the band edge electroluminescence persists up to room temperature. Quantitative modelling of the electroluminescence could explain the temperature and SiGe thickness dependence of the electroluminescence.

Original languageEnglish (US)
Pages (from-to)166-169
Number of pages4
JournalMaterials Science and Engineering B
Volume51
Issue number1-3
DOIs
StatePublished - Feb 27 1998
Externally publishedYes

Keywords

  • Electroluminescence
  • Facets
  • Selective epitaxy
  • Strained SiGe

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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