TY - JOUR
T1 - Selective bond breaking in amorphous hydrogenated silicon by using Duke FEL
AU - Gracin, D.
AU - Borjanovic, V.
AU - Vlahovic, B.
AU - Sunda-Meya, A.
AU - Patterson, T. M.
AU - Dutta, J. M.
AU - Hauger, S.
AU - Pinayev, I.
AU - Ware, M. E.
AU - Alexson, D.
AU - Nemanich, R. J.
AU - Von Roedern, B.
N1 - Funding Information:
The authors wish to thank A. Soldi for useful suggestions. This work was supported by the NREL subcontract No AAK-9-18675-03.
PY - 2001/11/21
Y1 - 2001/11/21
N2 - In order to study the possibility of influencing the phase containing predominantly Si-H bonds, while having minimal influence on the surrounding materials, samples of a-Si were exposed to Duke-FEL Mark III radiation. The wavelength of the radiation was selected to fit the absorption maximum of stretching vibrations of Si-H bonds (5μm). By varying the wavelength in the vicinity of 5μm, the illumination time and the power density, different types and degrees of structural ordering, of Si-H bonds and Si-Si bonds were obtained, and monitored by Raman spectroscopy. By increasing the energy density, at certain level the crystallization occurs. We were able to demonstrate a direct correlation between short and intermediate range ordering and the wavelength and intensity of the radiation. Using 5μm at 10kW/cm2 leads to increase in structural disordering. However, increasing power to 60kW/cm2 improves both short and intermediate order in a-Si:H, as demonstrated by Raman spectroscopy. Further increasing power density by an order of magnitude results in crystallization of the sample.
AB - In order to study the possibility of influencing the phase containing predominantly Si-H bonds, while having minimal influence on the surrounding materials, samples of a-Si were exposed to Duke-FEL Mark III radiation. The wavelength of the radiation was selected to fit the absorption maximum of stretching vibrations of Si-H bonds (5μm). By varying the wavelength in the vicinity of 5μm, the illumination time and the power density, different types and degrees of structural ordering, of Si-H bonds and Si-Si bonds were obtained, and monitored by Raman spectroscopy. By increasing the energy density, at certain level the crystallization occurs. We were able to demonstrate a direct correlation between short and intermediate range ordering and the wavelength and intensity of the radiation. Using 5μm at 10kW/cm2 leads to increase in structural disordering. However, increasing power to 60kW/cm2 improves both short and intermediate order in a-Si:H, as demonstrated by Raman spectroscopy. Further increasing power density by an order of magnitude results in crystallization of the sample.
KW - A-Si:H
KW - FEL
KW - Ordering
KW - Raman spectroscopy
KW - Recrystallization
KW - Structure
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U2 - 10.1016/S0168-9002(01)01578-9
DO - 10.1016/S0168-9002(01)01578-9
M3 - Conference article
AN - SCOPUS:0035930312
SN - 0168-9002
VL - 475
SP - 635
EP - 639
JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
IS - 1-3
T2 - 22nd International Free Electron Laser Conference (FEL 2000)
Y2 - 13 August 2000 through 18 August 2000
ER -