Abstract
A scanning tunneling microscope tip has been used to selectively write oxidation patterns on a thin Si3N4 film on p+ silicon. After etching the patterns in hydrofluoric acid, trenches are observed, consistent with silicon consumption in the oxidation process. The patterns in the nitride film could be transferred to the underlying silicon with an ammonium fluoride etch.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 106-109 |
| Number of pages | 4 |
| Journal | Nanotechnology |
| Volume | 7 |
| Issue number | 2 |
| DOIs | |
| State | Published - Jun 1 1996 |
ASJC Scopus subject areas
- Bioengineering
- Chemistry(all)
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
- Electrical and Electronic Engineering
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Day, H. C., & Allee, D. (1996). Selective area oxidation of Si3N4 with an ambient scanning tunneling microscope. Nanotechnology, 7(2), 106-109. https://doi.org/10.1088/0957-4484/7/2/002