Selective area oxidation of Si3N4 with an ambient scanning tunneling microscope

H. C. Day; David Allee

doi:10.1088/0957-4484/7/2/002

Selective area oxidation of Si₃N₄ with an ambient scanning tunneling microscope

H. C. Day, David Allee

IAFSE-ECEE: Electrical Engineering

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

A scanning tunneling microscope tip has been used to selectively write oxidation patterns on a thin Si₃N₄ film on p⁺ silicon. After etching the patterns in hydrofluoric acid, trenches are observed, consistent with silicon consumption in the oxidation process. The patterns in the nitride film could be transferred to the underlying silicon with an ammonium fluoride etch.

Original language	English (US)
Pages (from-to)	106-109
Number of pages	4
Journal	Nanotechnology
Volume	7
Issue number	2
DOIs	https://doi.org/10.1088/0957-4484/7/2/002
State	Published - Jun 1 1996

ASJC Scopus subject areas

Bioengineering
Chemistry(all)
Materials Science(all)
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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abstract = "A scanning tunneling microscope tip has been used to selectively write oxidation patterns on a thin Si3N4 film on p+ silicon. After etching the patterns in hydrofluoric acid, trenches are observed, consistent with silicon consumption in the oxidation process. The patterns in the nitride film could be transferred to the underlying silicon with an ammonium fluoride etch.",

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