Selective area oxidation of Si3N4 with an ambient scanning tunneling microscope

H. C. Day; David Allee

doi:10.1088/0957-4484/7/2/002

Selective area oxidation of Si₃N₄ with an ambient scanning tunneling microscope

H. C. Day, David Allee

Electrical Engineering

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

A scanning tunneling microscope tip has been used to selectively write oxidation patterns on a thin Si₃N₄ film on p⁺ silicon. After etching the patterns in hydrofluoric acid, trenches are observed, consistent with silicon consumption in the oxidation process. The patterns in the nitride film could be transferred to the underlying silicon with an ammonium fluoride etch.

Original language	English (US)
Pages (from-to)	106-109
Number of pages	4
Journal	Nanotechnology
Volume	7
Issue number	2
DOIs	https://doi.org/10.1088/0957-4484/7/2/002
State	Published - Jun 1996

ASJC Scopus subject areas

Bioengineering
General Chemistry
General Materials Science
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

Access to Document

10.1088/0957-4484/7/2/002

Cite this

@article{309a069624f9463ab455cb0d2889e496,

title = "Selective area oxidation of Si3N4 with an ambient scanning tunneling microscope",

abstract = "A scanning tunneling microscope tip has been used to selectively write oxidation patterns on a thin Si3N4 film on p+ silicon. After etching the patterns in hydrofluoric acid, trenches are observed, consistent with silicon consumption in the oxidation process. The patterns in the nitride film could be transferred to the underlying silicon with an ammonium fluoride etch.",

author = "Day, {H. C.} and David Allee",

year = "1996",

month = jun,

doi = "10.1088/0957-4484/7/2/002",

language = "English (US)",

volume = "7",

pages = "106--109",

journal = "Nanotechnology",

issn = "0957-4484",

publisher = "IOP Publishing Ltd.",

number = "2",

}

TY - JOUR

T1 - Selective area oxidation of Si3N4 with an ambient scanning tunneling microscope

AU - Day, H. C.

AU - Allee, David

PY - 1996/6

Y1 - 1996/6

N2 - A scanning tunneling microscope tip has been used to selectively write oxidation patterns on a thin Si3N4 film on p+ silicon. After etching the patterns in hydrofluoric acid, trenches are observed, consistent with silicon consumption in the oxidation process. The patterns in the nitride film could be transferred to the underlying silicon with an ammonium fluoride etch.

AB - A scanning tunneling microscope tip has been used to selectively write oxidation patterns on a thin Si3N4 film on p+ silicon. After etching the patterns in hydrofluoric acid, trenches are observed, consistent with silicon consumption in the oxidation process. The patterns in the nitride film could be transferred to the underlying silicon with an ammonium fluoride etch.

UR - http://www.scopus.com/inward/record.url?scp=0030171555&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030171555&partnerID=8YFLogxK

U2 - 10.1088/0957-4484/7/2/002

DO - 10.1088/0957-4484/7/2/002

M3 - Article

AN - SCOPUS:0030171555

SN - 0957-4484

VL - 7

SP - 106

EP - 109

JO - Nanotechnology

JF - Nanotechnology

IS - 2

ER -

Selective area oxidation of Si₃N₄ with an ambient scanning tunneling microscope

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this