Abstract
The use of a scanning force microscope with a metallized tip to do selective area oxidation of silicon is demonstrated. Sub-100 nm lines have been achieved. Removal of the oxide lines with buffered hydrofluoric acid reveals trenches in the silicon consistent with silicon consumption in SiO2 formation.
Original language | English (US) |
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Pages (from-to) | 2691-2693 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 62 |
Issue number | 21 |
DOIs | |
State | Published - 1993 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)