Abstract

The use of a scanning force microscope with a metallized tip to do selective area oxidation of silicon is demonstrated. Sub-100 nm lines have been achieved. Removal of the oxide lines with buffered hydrofluoric acid reveals trenches in the silicon consistent with silicon consumption in SiO2 formation.

Original languageEnglish (US)
Pages (from-to)2691-2693
Number of pages3
JournalApplied Physics Letters
Volume62
Issue number21
DOIs
StatePublished - Dec 1 1993

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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