Abstract

The use of a scanning force microscope with a metallized tip to do selective area oxidation of silicon is demonstrated. Sub-100 nm lines have been achieved. Removal of the oxide lines with buffered hydrofluoric acid reveals trenches in the silicon consistent with silicon consumption in SiO2 formation.

Original languageEnglish (US)
Pages (from-to)2691-2693
Number of pages3
JournalApplied Physics Letters
Volume62
Issue number21
DOIs
StatePublished - 1993

Fingerprint

microscopes
oxidation
scanning
silicon
hydrofluoric acid
oxides

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Selective area oxidation of silicon with a scanning force microscope. / Day, H. C.; Allee, David.

In: Applied Physics Letters, Vol. 62, No. 21, 1993, p. 2691-2693.

Research output: Contribution to journalArticle

@article{d2a330c4e5a54217afceb48713942e49,
title = "Selective area oxidation of silicon with a scanning force microscope",
abstract = "The use of a scanning force microscope with a metallized tip to do selective area oxidation of silicon is demonstrated. Sub-100 nm lines have been achieved. Removal of the oxide lines with buffered hydrofluoric acid reveals trenches in the silicon consistent with silicon consumption in SiO2 formation.",
author = "Day, {H. C.} and David Allee",
year = "1993",
doi = "10.1063/1.109259",
language = "English (US)",
volume = "62",
pages = "2691--2693",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "21",

}

TY - JOUR

T1 - Selective area oxidation of silicon with a scanning force microscope

AU - Day, H. C.

AU - Allee, David

PY - 1993

Y1 - 1993

N2 - The use of a scanning force microscope with a metallized tip to do selective area oxidation of silicon is demonstrated. Sub-100 nm lines have been achieved. Removal of the oxide lines with buffered hydrofluoric acid reveals trenches in the silicon consistent with silicon consumption in SiO2 formation.

AB - The use of a scanning force microscope with a metallized tip to do selective area oxidation of silicon is demonstrated. Sub-100 nm lines have been achieved. Removal of the oxide lines with buffered hydrofluoric acid reveals trenches in the silicon consistent with silicon consumption in SiO2 formation.

UR - http://www.scopus.com/inward/record.url?scp=0000800491&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000800491&partnerID=8YFLogxK

U2 - 10.1063/1.109259

DO - 10.1063/1.109259

M3 - Article

AN - SCOPUS:0000800491

VL - 62

SP - 2691

EP - 2693

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 21

ER -