The use of a scanning force microscope with a metallized tip to do selective area oxidation of silicon is demonstrated. Sub-100 nm lines have been achieved. Removal of the oxide lines with buffered hydrofluoric acid reveals trenches in the silicon consistent with silicon consumption in SiO2 formation.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - 1993|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)