Selecting wave function states in open quantum dots

R. Akis, J. P. Bird, D. K. Ferry, Dragica Vasileska, J. Cooper, Y. Aoyagi, T. Sugano

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We study how wave function scarring in an open quantum dot is influenced as the strength of its environmental coupling is varied and show evidence for groups of wave function scars that recur periodically with gate voltage. The precise form of these scars is found to evolve with gate voltage, which we discuss in terms of the properties of the semi-classical orbits that give rise to the scars. We also provide convincing experimental evidence for a correlation between the scars and the oscillations observed in the conductance when the gate voltage is varied.

Original languageEnglish (US)
Pages (from-to)740-744
Number of pages5
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume7
Issue number3
DOIs
StatePublished - May 2000

Fingerprint

scars
Wave functions
Semiconductor quantum dots
quantum dots
wave functions
Electric potential
electric potential
Orbits
orbits
oscillations

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Selecting wave function states in open quantum dots. / Akis, R.; Bird, J. P.; Ferry, D. K.; Vasileska, Dragica; Cooper, J.; Aoyagi, Y.; Sugano, T.

In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 7, No. 3, 05.2000, p. 740-744.

Research output: Contribution to journalArticle

Akis, R. ; Bird, J. P. ; Ferry, D. K. ; Vasileska, Dragica ; Cooper, J. ; Aoyagi, Y. ; Sugano, T. / Selecting wave function states in open quantum dots. In: Physica E: Low-Dimensional Systems and Nanostructures. 2000 ; Vol. 7, No. 3. pp. 740-744.
@article{17b1dbc831644d1ca643cf258f5fe451,
title = "Selecting wave function states in open quantum dots",
abstract = "We study how wave function scarring in an open quantum dot is influenced as the strength of its environmental coupling is varied and show evidence for groups of wave function scars that recur periodically with gate voltage. The precise form of these scars is found to evolve with gate voltage, which we discuss in terms of the properties of the semi-classical orbits that give rise to the scars. We also provide convincing experimental evidence for a correlation between the scars and the oscillations observed in the conductance when the gate voltage is varied.",
author = "R. Akis and Bird, {J. P.} and Ferry, {D. K.} and Dragica Vasileska and J. Cooper and Y. Aoyagi and T. Sugano",
year = "2000",
month = "5",
doi = "10.1016/S1386-9477(00)00049-7",
language = "English (US)",
volume = "7",
pages = "740--744",
journal = "Physica E: Low-Dimensional Systems and Nanostructures",
issn = "1386-9477",
publisher = "Elsevier",
number = "3",

}

TY - JOUR

T1 - Selecting wave function states in open quantum dots

AU - Akis, R.

AU - Bird, J. P.

AU - Ferry, D. K.

AU - Vasileska, Dragica

AU - Cooper, J.

AU - Aoyagi, Y.

AU - Sugano, T.

PY - 2000/5

Y1 - 2000/5

N2 - We study how wave function scarring in an open quantum dot is influenced as the strength of its environmental coupling is varied and show evidence for groups of wave function scars that recur periodically with gate voltage. The precise form of these scars is found to evolve with gate voltage, which we discuss in terms of the properties of the semi-classical orbits that give rise to the scars. We also provide convincing experimental evidence for a correlation between the scars and the oscillations observed in the conductance when the gate voltage is varied.

AB - We study how wave function scarring in an open quantum dot is influenced as the strength of its environmental coupling is varied and show evidence for groups of wave function scars that recur periodically with gate voltage. The precise form of these scars is found to evolve with gate voltage, which we discuss in terms of the properties of the semi-classical orbits that give rise to the scars. We also provide convincing experimental evidence for a correlation between the scars and the oscillations observed in the conductance when the gate voltage is varied.

UR - http://www.scopus.com/inward/record.url?scp=0033690085&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033690085&partnerID=8YFLogxK

U2 - 10.1016/S1386-9477(00)00049-7

DO - 10.1016/S1386-9477(00)00049-7

M3 - Article

AN - SCOPUS:0033690085

VL - 7

SP - 740

EP - 744

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

IS - 3

ER -