Segregation of Cu in Cu (Ti) alloys during nitridation in NH3

Daniel Adams, Terry Alford, N. D. Theodore, S. W. Russell

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Cu(Ti 27 at.%) alloys on SiO2 were reacted in NH3 for 30 min over the temperature range 400-700 °C. Rutherford backscattering spectrometry in conjunction with high resolution transmission electron microscopy were utilized to investigate reaction products. At 400-450 °C, Ti is observed to segregate to the free surface to react with NH3, forming an Ti oxynitride layer. Above 500 °C, Ti segregates to both the free surface and to the alloy/SiO2 interface, leaving relatively-pure Cu layer. Reaction between Ti and SiO2 results in a TiO Ti5Si3 bilayer structure. By use of high spatial resolution energy dispersive X-ray spcctroscopy, the presence of a Cu-containing layer at the TiO Ti5Si3 interface is observed. This layer may also contain Ti, Si and/or O. We propose a mechanism for Cu segregation to this interface which requires Cu diffusion across TiO and subsequent dissociation of Ti5Si3. Thermodynamic calculations support this mechanism.

Original languageEnglish (US)
Pages (from-to)346-350
Number of pages5
JournalThin Solid Films
Volume270
Issue number1-2
DOIs
StatePublished - Dec 1 1995

Fingerprint

Nitridation
Rutherford backscattering spectroscopy
High resolution transmission electron microscopy
Reaction products
Spectrometry
Thermodynamics
X rays
oxynitrides
high resolution
reaction products
backscattering
spatial resolution
dissociation
Temperature
thermodynamics
transmission electron microscopy
Ti-Cu alloy
spectroscopy
x rays
temperature

Keywords

  • Copper
  • Nitrides
  • Titanium

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces
  • Condensed Matter Physics

Cite this

Segregation of Cu in Cu (Ti) alloys during nitridation in NH3 . / Adams, Daniel; Alford, Terry; Theodore, N. D.; Russell, S. W.

In: Thin Solid Films, Vol. 270, No. 1-2, 01.12.1995, p. 346-350.

Research output: Contribution to journalArticle

Adams, Daniel ; Alford, Terry ; Theodore, N. D. ; Russell, S. W. / Segregation of Cu in Cu (Ti) alloys during nitridation in NH3 In: Thin Solid Films. 1995 ; Vol. 270, No. 1-2. pp. 346-350.
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N2 - Cu(Ti 27 at.%) alloys on SiO2 were reacted in NH3 for 30 min over the temperature range 400-700 °C. Rutherford backscattering spectrometry in conjunction with high resolution transmission electron microscopy were utilized to investigate reaction products. At 400-450 °C, Ti is observed to segregate to the free surface to react with NH3, forming an Ti oxynitride layer. Above 500 °C, Ti segregates to both the free surface and to the alloy/SiO2 interface, leaving relatively-pure Cu layer. Reaction between Ti and SiO2 results in a TiO Ti5Si3 bilayer structure. By use of high spatial resolution energy dispersive X-ray spcctroscopy, the presence of a Cu-containing layer at the TiO Ti5Si3 interface is observed. This layer may also contain Ti, Si and/or O. We propose a mechanism for Cu segregation to this interface which requires Cu diffusion across TiO and subsequent dissociation of Ti5Si3. Thermodynamic calculations support this mechanism.

AB - Cu(Ti 27 at.%) alloys on SiO2 were reacted in NH3 for 30 min over the temperature range 400-700 °C. Rutherford backscattering spectrometry in conjunction with high resolution transmission electron microscopy were utilized to investigate reaction products. At 400-450 °C, Ti is observed to segregate to the free surface to react with NH3, forming an Ti oxynitride layer. Above 500 °C, Ti segregates to both the free surface and to the alloy/SiO2 interface, leaving relatively-pure Cu layer. Reaction between Ti and SiO2 results in a TiO Ti5Si3 bilayer structure. By use of high spatial resolution energy dispersive X-ray spcctroscopy, the presence of a Cu-containing layer at the TiO Ti5Si3 interface is observed. This layer may also contain Ti, Si and/or O. We propose a mechanism for Cu segregation to this interface which requires Cu diffusion across TiO and subsequent dissociation of Ti5Si3. Thermodynamic calculations support this mechanism.

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