Segregation of Cu in Cu (Ti) alloys during nitridation in NH3

Daniel Adams; Terry Alford; N. D. Theodore; S. W. Russell

doi:10.1016/0040-6090(95)06712-4

Segregation of Cu in Cu (Ti) alloys during nitridation in NH₃

Daniel Adams, Terry Alford, N. D. Theodore, S. W. Russell

Chemical Engineering

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Cu(Ti 27 at.%) alloys on SiO₂ were reacted in NH₃ for 30 min over the temperature range 400-700 °C. Rutherford backscattering spectrometry in conjunction with high resolution transmission electron microscopy were utilized to investigate reaction products. At 400-450 °C, Ti is observed to segregate to the free surface to react with NH₃, forming an Ti oxynitride layer. Above 500 °C, Ti segregates to both the free surface and to the alloy/SiO₂ interface, leaving relatively-pure Cu layer. Reaction between Ti and SiO₂ results in a TiO Ti₅Si₃ bilayer structure. By use of high spatial resolution energy dispersive X-ray spcctroscopy, the presence of a Cu-containing layer at the TiO Ti₅Si₃ interface is observed. This layer may also contain Ti, Si and/or O. We propose a mechanism for Cu segregation to this interface which requires Cu diffusion across TiO and subsequent dissociation of Ti₅Si₃. Thermodynamic calculations support this mechanism.

Original language	English (US)
Pages (from-to)	346-350
Number of pages	5
Journal	Thin Solid Films
Volume	270
Issue number	1-2
DOIs	https://doi.org/10.1016/0040-6090(95)06712-4
State	Published - Dec 1 1995

Keywords

Copper
Nitrides
Titanium

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/0040-6090(95)06712-4

Cite this

@article{adf857cea35e460e9c54762d67fb0432,

title = "Segregation of Cu in Cu (Ti) alloys during nitridation in NH3",

abstract = "Cu(Ti 27 at.%) alloys on SiO2 were reacted in NH3 for 30 min over the temperature range 400-700 °C. Rutherford backscattering spectrometry in conjunction with high resolution transmission electron microscopy were utilized to investigate reaction products. At 400-450 °C, Ti is observed to segregate to the free surface to react with NH3, forming an Ti oxynitride layer. Above 500 °C, Ti segregates to both the free surface and to the alloy/SiO2 interface, leaving relatively-pure Cu layer. Reaction between Ti and SiO2 results in a TiO Ti5Si3 bilayer structure. By use of high spatial resolution energy dispersive X-ray spcctroscopy, the presence of a Cu-containing layer at the TiO Ti5Si3 interface is observed. This layer may also contain Ti, Si and/or O. We propose a mechanism for Cu segregation to this interface which requires Cu diffusion across TiO and subsequent dissociation of Ti5Si3. Thermodynamic calculations support this mechanism.",

keywords = "Copper, Nitrides, Titanium",

author = "Daniel Adams and Terry Alford and Theodore, {N. D.} and Russell, {S. W.}",

note = "Funding Information: The authorsw ould like to thank Dr. Moon Kim (Center for Solid State Science, ASU, AZ) and Dr. Stella Hong (Motorola, Mesa, AZ) for their fruitful discussionsa nd contributions.A specialt hank you to Dr. J. Liu (Center for Solid StateS cience,A SU, AZ) for assistingw ith theE DS analysis. We also acknowledget he financial supportp rovided by the National Science Foundation (L. Hess, DMR-9307662 and L. Salmon, ECS-9410399). Copyright: Copyright 2014 Elsevier B.V., All rights reserved.",

year = "1995",

month = dec,

day = "1",

doi = "10.1016/0040-6090(95)06712-4",

language = "English (US)",

volume = "270",

pages = "346--350",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "1-2",

}

TY - JOUR

T1 - Segregation of Cu in Cu (Ti) alloys during nitridation in NH3

AU - Adams, Daniel

AU - Alford, Terry

AU - Theodore, N. D.

AU - Russell, S. W.

N1 - Funding Information: The authorsw ould like to thank Dr. Moon Kim (Center for Solid State Science, ASU, AZ) and Dr. Stella Hong (Motorola, Mesa, AZ) for their fruitful discussionsa nd contributions.A specialt hank you to Dr. J. Liu (Center for Solid StateS cience,A SU, AZ) for assistingw ith theE DS analysis. We also acknowledget he financial supportp rovided by the National Science Foundation (L. Hess, DMR-9307662 and L. Salmon, ECS-9410399). Copyright: Copyright 2014 Elsevier B.V., All rights reserved.

PY - 1995/12/1

Y1 - 1995/12/1

N2 - Cu(Ti 27 at.%) alloys on SiO2 were reacted in NH3 for 30 min over the temperature range 400-700 °C. Rutherford backscattering spectrometry in conjunction with high resolution transmission electron microscopy were utilized to investigate reaction products. At 400-450 °C, Ti is observed to segregate to the free surface to react with NH3, forming an Ti oxynitride layer. Above 500 °C, Ti segregates to both the free surface and to the alloy/SiO2 interface, leaving relatively-pure Cu layer. Reaction between Ti and SiO2 results in a TiO Ti5Si3 bilayer structure. By use of high spatial resolution energy dispersive X-ray spcctroscopy, the presence of a Cu-containing layer at the TiO Ti5Si3 interface is observed. This layer may also contain Ti, Si and/or O. We propose a mechanism for Cu segregation to this interface which requires Cu diffusion across TiO and subsequent dissociation of Ti5Si3. Thermodynamic calculations support this mechanism.

AB - Cu(Ti 27 at.%) alloys on SiO2 were reacted in NH3 for 30 min over the temperature range 400-700 °C. Rutherford backscattering spectrometry in conjunction with high resolution transmission electron microscopy were utilized to investigate reaction products. At 400-450 °C, Ti is observed to segregate to the free surface to react with NH3, forming an Ti oxynitride layer. Above 500 °C, Ti segregates to both the free surface and to the alloy/SiO2 interface, leaving relatively-pure Cu layer. Reaction between Ti and SiO2 results in a TiO Ti5Si3 bilayer structure. By use of high spatial resolution energy dispersive X-ray spcctroscopy, the presence of a Cu-containing layer at the TiO Ti5Si3 interface is observed. This layer may also contain Ti, Si and/or O. We propose a mechanism for Cu segregation to this interface which requires Cu diffusion across TiO and subsequent dissociation of Ti5Si3. Thermodynamic calculations support this mechanism.

KW - Copper

KW - Nitrides

KW - Titanium

UR - http://www.scopus.com/inward/record.url?scp=0029510558&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029510558&partnerID=8YFLogxK

U2 - 10.1016/0040-6090(95)06712-4

DO - 10.1016/0040-6090(95)06712-4

M3 - Article

AN - SCOPUS:0029510558

SN - 0040-6090

VL - 270

SP - 346

EP - 350

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -