Seeding of silicon wire growth by out-diffused metal precipitates

Vidya Ganapati; David P. Fenning; Mariana I. Bertoni; Chito E. Kendrick; Alexandria E. Fecych; Joan M. Redwing; Tonio Buonassisi

doi:10.1002/smll.201002250

Seeding of silicon wire growth by out-diffused metal precipitates

Vidya Ganapati, David P. Fenning, Mariana I. Bertoni, Chito E. Kendrick, Alexandria E. Fecych, Joan M. Redwing, Tonio Buonassisi

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Metals diffused into bulk silicon can be manipulated to out-diffuse and precipitate in microsized droplets at surfaces, allowing for subsequent silicon wire growth. This technique allows for both high-throughput and precision in the size and positions of metal droplets on the silicon surface.

Original language	English (US)
Pages (from-to)	563-567
Number of pages	5
Journal	Small
Volume	7
Issue number	5
DOIs	https://doi.org/10.1002/smll.201002250
State	Published - Mar 7 2011
Externally published	Yes

Keywords

bulk diffusion
metal catalyst
microwires
surface precipitation
vapor-liquid-solid method

ASJC Scopus subject areas

Biotechnology
Biomaterials
General Chemistry
General Materials Science

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10.1002/smll.201002250

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@article{611f0201666649d081ef369fa2e38349,

title = "Seeding of silicon wire growth by out-diffused metal precipitates",

abstract = "Metals diffused into bulk silicon can be manipulated to out-diffuse and precipitate in microsized droplets at surfaces, allowing for subsequent silicon wire growth. This technique allows for both high-throughput and precision in the size and positions of metal droplets on the silicon surface.",

keywords = "bulk diffusion, metal catalyst, microwires, surface precipitation, vapor-liquid-solid method",

author = "Vidya Ganapati and Fenning, {David P.} and Bertoni, {Mariana I.} and Kendrick, {Chito E.} and Fecych, {Alexandria E.} and Redwing, {Joan M.} and Tonio Buonassisi",

year = "2011",

month = mar,

day = "7",

doi = "10.1002/smll.201002250",

language = "English (US)",

volume = "7",

pages = "563--567",

journal = "Small",

issn = "1613-6810",

publisher = "Wiley-VCH Verlag",

number = "5",

}

TY - JOUR

T1 - Seeding of silicon wire growth by out-diffused metal precipitates

AU - Ganapati, Vidya

AU - Fenning, David P.

AU - Bertoni, Mariana I.

AU - Kendrick, Chito E.

AU - Fecych, Alexandria E.

AU - Redwing, Joan M.

AU - Buonassisi, Tonio

PY - 2011/3/7

Y1 - 2011/3/7

N2 - Metals diffused into bulk silicon can be manipulated to out-diffuse and precipitate in microsized droplets at surfaces, allowing for subsequent silicon wire growth. This technique allows for both high-throughput and precision in the size and positions of metal droplets on the silicon surface.

AB - Metals diffused into bulk silicon can be manipulated to out-diffuse and precipitate in microsized droplets at surfaces, allowing for subsequent silicon wire growth. This technique allows for both high-throughput and precision in the size and positions of metal droplets on the silicon surface.

KW - bulk diffusion

KW - metal catalyst

KW - microwires

KW - surface precipitation

KW - vapor-liquid-solid method

UR - http://www.scopus.com/inward/record.url?scp=79952228770&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79952228770&partnerID=8YFLogxK

U2 - 10.1002/smll.201002250

DO - 10.1002/smll.201002250

M3 - Article

C2 - 21370455

AN - SCOPUS:79952228770

SN - 1613-6810

VL - 7

SP - 563

EP - 567

JO - Small

JF - Small

IS - 5

ER -

Seeding of silicon wire growth by out-diffused metal precipitates

Abstract

Keywords

ASJC Scopus subject areas

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