Seeding of silicon wire growth by out-diffused metal precipitates

Vidya Ganapati, David P. Fenning, Mariana I. Bertoni, Chito E. Kendrick, Alexandria E. Fecych, Joan M. Redwing, Tonio Buonassisi

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

Metals diffused into bulk silicon can be manipulated to out-diffuse and precipitate in microsized droplets at surfaces, allowing for subsequent silicon wire growth. This technique allows for both high-throughput and precision in the size and positions of metal droplets on the silicon surface.

Original languageEnglish (US)
Pages (from-to)563-567
Number of pages5
JournalSmall
Volume7
Issue number5
DOIs
StatePublished - Mar 7 2011
Externally publishedYes

Keywords

  • bulk diffusion
  • metal catalyst
  • microwires
  • surface precipitation
  • vapor-liquid-solid method

ASJC Scopus subject areas

  • Biotechnology
  • Biomaterials
  • Chemistry(all)
  • Materials Science(all)

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  • Cite this

    Ganapati, V., Fenning, D. P., Bertoni, M. I., Kendrick, C. E., Fecych, A. E., Redwing, J. M., & Buonassisi, T. (2011). Seeding of silicon wire growth by out-diffused metal precipitates. Small, 7(5), 563-567. https://doi.org/10.1002/smll.201002250