Seeding atomic layer deposition of high-k dielectrics on epitaxial graphene with organic self-assembled monolayers

Engineering & Materials Science

• High-k dielectric 100%
• Self assembled monolayers 98%
• Atomic layer deposition 97%
• Graphene 74%
• Dielectric films 46%
• Nanoelectronics 29%
• Aluminum oxide 20%
• Scanning tunneling microscopy 18%
• Ellipsometry 17%
• Ultrahigh vacuum 16%
• Graphene oxide 15%
• Defect density 15%
• Sublimation 14%
• Atomic force microscopy 13%
• X ray photoelectron spectroscopy 12%
• Leakage currents 11%
• X rays 9%
• Capacitance 9%
• Capacitors 8%
• Scanning electron microscopy 8%
• Metals 6%

Chemical Compounds

• Atomic Layer Epitaxy 73%
• Dielectric Film 69%
• Self Assembled Monolayer 61%
• Dielectric Material 56%
• Graphene 44%
• Leakage Current 20%
• Reflectivity 18%
• Sublimation 18%
• Ellipsometry 17%
• Scanning Tunneling Microscopy 16%
• Capacitor 16%
• Vacuum 12%
• Atomic Force Microscopy 12%
• X-Ray Photoelectron Spectroscopy 11%
• X-Ray 9%
• Scanning Electron Microscopy 9%
• Chemistry 9%
• Liquid Film 7%
• Reaction Yield 6%

Physics & Astronomy

• inoculation 70%
• atomic layer epitaxy 66%
• graphene 51%
• pinholes 10%
• sublimation 10%
• viability 9%
• ultrahigh vacuum 9%
• ellipsometry 8%
• scanning tunneling microscopy 8%
• metal oxides 8%
• x rays 8%
• capacitors 7%
• chemistry 7%
• leakage 7%
• photoelectron spectroscopy 7%
• capacitance 7%
• atomic force microscopy 6%
• wafers 6%
• reflectance 6%
• scanning electron microscopy 5%
• high resolution 5%
• defects 5%