Abstract
The second-order Raman spectrum of AlAs has been measured on samples grown by molecular-beam epitaxy (MBE). The results show significant discrepancies with model calculations of the phonon density of states, but are consistent with recent first-principles calculations. This first-principles approach has been used to compute the phonon energies in GaAs-AlAs superlattices, with controversial implications regarding the sharpness of MBE-grown interfaces. The Raman results presented here support the conclusions of the first-principles analysis.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 5761-5764 |
| Number of pages | 4 |
| Journal | Physical Review B |
| Volume | 49 |
| Issue number | 8 |
| DOIs | |
| State | Published - 1994 |
ASJC Scopus subject areas
- Condensed Matter Physics