Second-order Raman scattering by confined optical phonons and interface vibrational modes in GaAs-AlAs superlattices

A. K. Sood, Jose Menendez, M. Cardona, K. Ploog

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

The second-order Raman spectrum of the confined GaAs-like optical phonons in a GaAs-AlAs superlattice is reported. For laser energies in resonance with the first exciton in the GaAs quantum wells, the experiments show a series of sharp peaks that can be attributed to combinations of confined phonons of A1 symmetry. An additional broader peak corresponds to the combination of the GaAs-like and AlAs-like interface vibrational modes previously reported in the first-order spectra. The resonance profile of the overtones and combinations of confined phonons is also presented.

Original languageEnglish (US)
Pages (from-to)1412-1414
Number of pages3
JournalPhysical Review B
Volume32
Issue number2
DOIs
StatePublished - 1985
Externally publishedYes

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Superlattices
Phonons
superlattices
Raman scattering
vibration mode
phonons
Raman spectra
Excitons
Semiconductor quantum wells
excitons
quantum wells
harmonics
Lasers
symmetry
profiles
lasers
gallium arsenide
Experiments
energy

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Second-order Raman scattering by confined optical phonons and interface vibrational modes in GaAs-AlAs superlattices. / Sood, A. K.; Menendez, Jose; Cardona, M.; Ploog, K.

In: Physical Review B, Vol. 32, No. 2, 1985, p. 1412-1414.

Research output: Contribution to journalArticle

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