SECOND ORDER DIFFERENCE SCHEME FOR TRANSIENT SEMICONDUCTOR DEVICE SIMULATION.

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Abstract

A second order scheme for the solution of the transient fundamental semiconductor device equations is presented which does not suffer from timestep restrictions due to the stiffness of the analytical problem. The second order accuracy as well as the stability properties are demonstrated on the simulation of a p-n-junction diode.

Original languageEnglish (US)
Pages (from-to)253-278
Number of pages26
JournalTransactions of the Society for Computer Simulation
Volume3
Issue number4
StatePublished - Oct 1986

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Semiconductor Device Simulation
Second-order Accuracy
Semiconductor Devices
Semiconductor devices
Difference Scheme
Diode
Stiffness
Diodes
Restriction
Simulation

ASJC Scopus subject areas

  • Computational Theory and Mathematics
  • Computer Graphics and Computer-Aided Design
  • Computer Science Applications
  • Software
  • Modeling and Simulation

Cite this

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title = "SECOND ORDER DIFFERENCE SCHEME FOR TRANSIENT SEMICONDUCTOR DEVICE SIMULATION.",
abstract = "A second order scheme for the solution of the transient fundamental semiconductor device equations is presented which does not suffer from timestep restrictions due to the stiffness of the analytical problem. The second order accuracy as well as the stability properties are demonstrated on the simulation of a p-n-junction diode.",
author = "Christian Ringhofer",
year = "1986",
month = "10",
language = "English (US)",
volume = "3",
pages = "253--278",
journal = "Transactions of the Society for Computer Simulation",
issn = "0740-6797",
publisher = "Society for Computer Simulation",
number = "4",

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