Abstract

In this paper we present SCHRED V2.0 to the scientific community. This simulation tool allows modeling of MOS capacitors with silicon and strained-Si substrates with arbitrary crystallographic directions. The tool can also model any material whose conduction band model is represented with three significant valleys. It is also capable of modeling a MOS capacitor with High-K Dielectric. Simulation results are presented which illustrate the versatility of the tool.

Original languageEnglish (US)
Title of host publication2010 14th International Workshop on Computational Electronics, IWCE 2010
Pages211-214
Number of pages4
DOIs
StatePublished - Dec 1 2010
Event2010 14th International Workshop on Computational Electronics, IWCE 2010 - Pisa, Italy
Duration: Oct 26 2010Oct 29 2010

Publication series

Name2010 14th International Workshop on Computational Electronics, IWCE 2010

Other

Other2010 14th International Workshop on Computational Electronics, IWCE 2010
CountryItaly
CityPisa
Period10/26/1010/29/10

Keywords

  • 1D Schrodinger-Poisson solvers
  • MOS capacitors
  • Quantum-mechanical size quantization effect

ASJC Scopus subject areas

  • Computational Theory and Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Kannan, G., & Vasileska, D. (2010). Schred V2.0: Tool to model MOS capacitors. In 2010 14th International Workshop on Computational Electronics, IWCE 2010 (pp. 211-214). [5677977] (2010 14th International Workshop on Computational Electronics, IWCE 2010). https://doi.org/10.1109/IWCE.2010.5677977