Schottky Junction Transistors for micropower RFICs

J. Spann, Zhiyuan Wu, P. Jaconelli, Jinman Yang, Trevor Thornton

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Results are presented from measurements and numerical simulations of Schottky Junction Transistors, a new type of micropower device capable of operating at GHz frequencies in the sub-threshold regime. Detailed measurements of the d.c. characteristics of a 2 μm gate length device agree well with numerical simulations. Measurements of transconductance and gate capacitance suggest that this relatively long gate length device will have a cut-off frequency of 126 MHz, which is again consistent with the numerical simulations. When projected to gate lengths of 0.1 pm, cut-off frequencies in excess of 10 GHz are predicted for drain currents of less than 1 μA/μm.

Original languageEnglish (US)
Title of host publicationIEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers
Pages423-426
Number of pages4
StatePublished - 2002
Event2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Seatle, WA, United States
Duration: Jun 2 2002Jun 4 2002

Other

Other2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
CountryUnited States
CitySeatle, WA
Period6/2/026/4/02

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Media Technology

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