Schottky junction transistors for micropower RFICs

J. Spann; Zhiyuan Wu; P. Jaconelli; Jinman Yang; Trevor Thornton

Schottky junction transistors for micropower RFICs

J. Spann, Zhiyuan Wu, P. Jaconelli, Jinman Yang, Trevor Thornton

Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

Results are presented from measurements and numerical simulations of Schottky Junction Transistors, a new type of micropower device capable of operating at GHz frequencies in the sub-threshold regime. Detailed measurements of the d.c. characteristics of a 2 μm gate length device agree well with numerical simulations. Measurements of transconductance and gate capacitance suggest that this relatively long gate length device will have a cut-off frequency of 126 MHz, which is again consistent with the numerical simulations. When projected to gate lengths of 0.1 μm, cut-off frequencies in excess of 10 GHz are predicted for drain currents of less than 1 μA/μm.

Original language	English (US)
Title of host publication	IEEE MTT-S International Microwave Symposium Digest
Pages	533-536
Number of pages	4
Volume	1
State	Published - 2002
Event	2002 IEEE MTT-S International Microwave Symposium Digest - Seattle, WA, United States Duration: Jun 2 2002 → Jun 7 2002

Other

Other	2002 IEEE MTT-S International Microwave Symposium Digest
Country/Territory	United States
City	Seattle, WA
Period	6/2/02 → 6/7/02

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics

Cite this

@inproceedings{24d1152290fc4119952990d8c6e18173,

title = "Schottky junction transistors for micropower RFICs",

abstract = "Results are presented from measurements and numerical simulations of Schottky Junction Transistors, a new type of micropower device capable of operating at GHz frequencies in the sub-threshold regime. Detailed measurements of the d.c. characteristics of a 2 μm gate length device agree well with numerical simulations. Measurements of transconductance and gate capacitance suggest that this relatively long gate length device will have a cut-off frequency of 126 MHz, which is again consistent with the numerical simulations. When projected to gate lengths of 0.1 μm, cut-off frequencies in excess of 10 GHz are predicted for drain currents of less than 1 μA/μm.",

author = "J. Spann and Zhiyuan Wu and P. Jaconelli and Jinman Yang and Trevor Thornton",

year = "2002",

language = "English (US)",

volume = "1",

pages = "533--536",

booktitle = "IEEE MTT-S International Microwave Symposium Digest",

note = "2002 IEEE MTT-S International Microwave Symposium Digest ; Conference date: 02-06-2002 Through 07-06-2002",

}

TY - GEN

T1 - Schottky junction transistors for micropower RFICs

AU - Spann, J.

AU - Wu, Zhiyuan

AU - Jaconelli, P.

AU - Yang, Jinman

AU - Thornton, Trevor

PY - 2002

Y1 - 2002

N2 - Results are presented from measurements and numerical simulations of Schottky Junction Transistors, a new type of micropower device capable of operating at GHz frequencies in the sub-threshold regime. Detailed measurements of the d.c. characteristics of a 2 μm gate length device agree well with numerical simulations. Measurements of transconductance and gate capacitance suggest that this relatively long gate length device will have a cut-off frequency of 126 MHz, which is again consistent with the numerical simulations. When projected to gate lengths of 0.1 μm, cut-off frequencies in excess of 10 GHz are predicted for drain currents of less than 1 μA/μm.

AB - Results are presented from measurements and numerical simulations of Schottky Junction Transistors, a new type of micropower device capable of operating at GHz frequencies in the sub-threshold regime. Detailed measurements of the d.c. characteristics of a 2 μm gate length device agree well with numerical simulations. Measurements of transconductance and gate capacitance suggest that this relatively long gate length device will have a cut-off frequency of 126 MHz, which is again consistent with the numerical simulations. When projected to gate lengths of 0.1 μm, cut-off frequencies in excess of 10 GHz are predicted for drain currents of less than 1 μA/μm.

UR - http://www.scopus.com/inward/record.url?scp=0036070412&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036070412&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0036070412

VL - 1

SP - 533

EP - 536

BT - IEEE MTT-S International Microwave Symposium Digest

T2 - 2002 IEEE MTT-S International Microwave Symposium Digest

Y2 - 2 June 2002 through 7 June 2002

ER -

Schottky junction transistors for micropower RFICs

Abstract

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ASJC Scopus subject areas

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