Schottky junction transistors for micropower RFICs

J. Spann, Zhiyuan Wu, P. Jaconelli, Jinman Yang, Trevor Thornton

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Results are presented from measurements and numerical simulations of Schottky Junction Transistors, a new type of micropower device capable of operating at GHz frequencies in the sub-threshold regime. Detailed measurements of the d.c. characteristics of a 2 μm gate length device agree well with numerical simulations. Measurements of transconductance and gate capacitance suggest that this relatively long gate length device will have a cut-off frequency of 126 MHz, which is again consistent with the numerical simulations. When projected to gate lengths of 0.1 μm, cut-off frequencies in excess of 10 GHz are predicted for drain currents of less than 1 μA/μm.

Original languageEnglish (US)
Title of host publicationIEEE MTT-S International Microwave Symposium Digest
Pages533-536
Number of pages4
Volume1
Publication statusPublished - 2002
Event2002 IEEE MTT-S International Microwave Symposium Digest - Seattle, WA, United States
Duration: Jun 2 2002Jun 7 2002

Other

Other2002 IEEE MTT-S International Microwave Symposium Digest
CountryUnited States
CitySeattle, WA
Period6/2/026/7/02

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Spann, J., Wu, Z., Jaconelli, P., Yang, J., & Thornton, T. (2002). Schottky junction transistors for micropower RFICs. In IEEE MTT-S International Microwave Symposium Digest (Vol. 1, pp. 533-536)