Schottky barriers on phosphorus-doped hydrogenated amorphous silicon: The effects of tunneling

W. B. Jackson, R. J. Nemanich, M. J. Thompson, B. Wacker

Research output: Contribution to journalArticle

27 Scopus citations

Abstract

A systematic investigation of the transport properties of PtSi on phosphorus-doped hydrogenated amorphous silicon (a-Si:H) interfaces is presented. The transition from rectifying Schottky barriers to Ohmic contacts is observed as the doping level is increased. The barrier heights of PtSi on a-Si:H versus doping concentration and applied bias are measured with use of internal photoemission. In addition, the activation energy, ideality factor, flat-band voltage, and reverse-bias current-voltage characteristics are also determined. The results are analyzed in terms of the theory for thermionic-field-emission tunneling through the barrier. The agreement indicates that tunneling is extremely important for barriers on all but the lowest-doped a-Si:H at room temperature. While a change 0.6 eV of the effective barrier height is observed, the analysis indicates that the actual barrier height is independent of doping despite a change in the Fermi level of 0.4 eV. No evidence for the lowering of the barrier due to phosphorus-induced donor levels is found. The origin of the barrier formation and evolution of the electrical characteristics of the contact as a function of doping are discussed.

Original languageEnglish (US)
Pages (from-to)6936-6945
Number of pages10
JournalPhysical Review B
Volume33
Issue number10
DOIs
StatePublished - Jan 1 1986
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics

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