Schottky barriers on atomically clean cleaved GaAs

Nathan Newman, T. Kendelewicz, D. Thomson, S. H. Pan, S. J. Eglash, W. E. Spicer

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

We report here the first systematic study of the electronic properties of Al, Au, Ag and Cu Schottky barrier diodes on n-type GaAs. These diodes were formed on cleaved (110) surfaces in ultra-high vacuum (UHV) using similar conditions and evaporation rates during the initial stages of Schottky barrier formation as in the photoemission spectroscopy (PES) studies. Barrier height determinations using device measuring techniques (current-voltage (I-V), capacitive-voltage (C--V) and internal photoemission) are compared with the results from the PES studies. Essentially identical barrier heights are found from PES and the electrical measurements for the noble metals. The barrier height of the noble metal: n-GaAs system (0.9 eV) is larger than any simple metal on n-type GaAs previously reported. This is examined in light of recent work by Zur, McGill and Smith [22] and a model is suggested to explain it. Results of this study are found to be consistent with the unified defect model which has hypothesized that the barrier height is established by the energy levels of structural defects formed at the surface during the metal deposition.

Original languageEnglish (US)
Pages (from-to)307-312
Number of pages6
JournalSolid State Electronics
Volume28
Issue number3
DOIs
StatePublished - 1985
Externally publishedYes

Fingerprint

Photoelectron spectroscopy
Precious metals
photoelectric emission
Metals
Schottky barrier diodes
Defects
noble metals
Photoemission
Ultrahigh vacuum
Electric potential
Electronic properties
Electron energy levels
spectroscopy
Evaporation
Diodes
evaporation rate
defects
electric potential
Schottky diodes
metals

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Newman, N., Kendelewicz, T., Thomson, D., Pan, S. H., Eglash, S. J., & Spicer, W. E. (1985). Schottky barriers on atomically clean cleaved GaAs. Solid State Electronics, 28(3), 307-312. https://doi.org/10.1016/0038-1101(85)90011-5

Schottky barriers on atomically clean cleaved GaAs. / Newman, Nathan; Kendelewicz, T.; Thomson, D.; Pan, S. H.; Eglash, S. J.; Spicer, W. E.

In: Solid State Electronics, Vol. 28, No. 3, 1985, p. 307-312.

Research output: Contribution to journalArticle

Newman, N, Kendelewicz, T, Thomson, D, Pan, SH, Eglash, SJ & Spicer, WE 1985, 'Schottky barriers on atomically clean cleaved GaAs', Solid State Electronics, vol. 28, no. 3, pp. 307-312. https://doi.org/10.1016/0038-1101(85)90011-5
Newman, Nathan ; Kendelewicz, T. ; Thomson, D. ; Pan, S. H. ; Eglash, S. J. ; Spicer, W. E. / Schottky barriers on atomically clean cleaved GaAs. In: Solid State Electronics. 1985 ; Vol. 28, No. 3. pp. 307-312.
@article{d930581289a841cd9e97ac097a4b171f,
title = "Schottky barriers on atomically clean cleaved GaAs",
abstract = "We report here the first systematic study of the electronic properties of Al, Au, Ag and Cu Schottky barrier diodes on n-type GaAs. These diodes were formed on cleaved (110) surfaces in ultra-high vacuum (UHV) using similar conditions and evaporation rates during the initial stages of Schottky barrier formation as in the photoemission spectroscopy (PES) studies. Barrier height determinations using device measuring techniques (current-voltage (I-V), capacitive-voltage (C--V) and internal photoemission) are compared with the results from the PES studies. Essentially identical barrier heights are found from PES and the electrical measurements for the noble metals. The barrier height of the noble metal: n-GaAs system (0.9 eV) is larger than any simple metal on n-type GaAs previously reported. This is examined in light of recent work by Zur, McGill and Smith [22] and a model is suggested to explain it. Results of this study are found to be consistent with the unified defect model which has hypothesized that the barrier height is established by the energy levels of structural defects formed at the surface during the metal deposition.",
author = "Nathan Newman and T. Kendelewicz and D. Thomson and Pan, {S. H.} and Eglash, {S. J.} and Spicer, {W. E.}",
year = "1985",
doi = "10.1016/0038-1101(85)90011-5",
language = "English (US)",
volume = "28",
pages = "307--312",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier Limited",
number = "3",

}

TY - JOUR

T1 - Schottky barriers on atomically clean cleaved GaAs

AU - Newman, Nathan

AU - Kendelewicz, T.

AU - Thomson, D.

AU - Pan, S. H.

AU - Eglash, S. J.

AU - Spicer, W. E.

PY - 1985

Y1 - 1985

N2 - We report here the first systematic study of the electronic properties of Al, Au, Ag and Cu Schottky barrier diodes on n-type GaAs. These diodes were formed on cleaved (110) surfaces in ultra-high vacuum (UHV) using similar conditions and evaporation rates during the initial stages of Schottky barrier formation as in the photoemission spectroscopy (PES) studies. Barrier height determinations using device measuring techniques (current-voltage (I-V), capacitive-voltage (C--V) and internal photoemission) are compared with the results from the PES studies. Essentially identical barrier heights are found from PES and the electrical measurements for the noble metals. The barrier height of the noble metal: n-GaAs system (0.9 eV) is larger than any simple metal on n-type GaAs previously reported. This is examined in light of recent work by Zur, McGill and Smith [22] and a model is suggested to explain it. Results of this study are found to be consistent with the unified defect model which has hypothesized that the barrier height is established by the energy levels of structural defects formed at the surface during the metal deposition.

AB - We report here the first systematic study of the electronic properties of Al, Au, Ag and Cu Schottky barrier diodes on n-type GaAs. These diodes were formed on cleaved (110) surfaces in ultra-high vacuum (UHV) using similar conditions and evaporation rates during the initial stages of Schottky barrier formation as in the photoemission spectroscopy (PES) studies. Barrier height determinations using device measuring techniques (current-voltage (I-V), capacitive-voltage (C--V) and internal photoemission) are compared with the results from the PES studies. Essentially identical barrier heights are found from PES and the electrical measurements for the noble metals. The barrier height of the noble metal: n-GaAs system (0.9 eV) is larger than any simple metal on n-type GaAs previously reported. This is examined in light of recent work by Zur, McGill and Smith [22] and a model is suggested to explain it. Results of this study are found to be consistent with the unified defect model which has hypothesized that the barrier height is established by the energy levels of structural defects formed at the surface during the metal deposition.

UR - http://www.scopus.com/inward/record.url?scp=0022024927&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0022024927&partnerID=8YFLogxK

U2 - 10.1016/0038-1101(85)90011-5

DO - 10.1016/0038-1101(85)90011-5

M3 - Article

VL - 28

SP - 307

EP - 312

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 3

ER -