Schottky barrier instabilities due to contamination

N. Newman, Z. Liliental-Weber, E. R. Weber, J. Washburn, W. E. Spicer

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

We reported here a systematic study of the annealing-induced changes in the barrier height of Schottky barrier diodes fabricated on atomically clean and contaminated surfaces. Al, Ag, Au, and Cr/GaAs(110) diodes were fabricated by in situ deposition on clean n-type GaAs(110) surfaces prepared by cleavage in ultrahigh vacuum and on contaminated surfaces prepared by cleavage and exposure to the atmosphere for ∼1-2 h. This study demonstrates that the as-deposited barrier height and the annealing-induced changes in the barrier height of diodes formed with an interfacial layer of contamination are distinctly different from the characteristics of diodes formed on clean semiconductor surfaces. The presence of an interfacial layer of contamination is found to significantly degrade the stability of the diode's barrier height to annealing.

Original languageEnglish (US)
Pages (from-to)145-147
Number of pages3
JournalApplied Physics Letters
Volume53
Issue number2
DOIs
StatePublished - 1988
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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