Schottky barrier amorphous-crystalline interface formation

Malcolm J. Thompson, Robert Nemanich, Chuang Tsai Chuang Chuang Tsai

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

The electrical properties of metal-a-Si:H contacts will be discussed. The relationship between the Schottky barrier contacts and the structural properties of the interface is reviewed. Polycrystalline silicides form at the interface of Pd and Pt on a-Si:H; the formation of the silicides is accompanied by only small changes in the Schottky barrier height. Au and Al cause crystallization of a-Si:H when annealed to 250°C. The crystallization with Au contacts creates very little change in the electrical properties of the interface; however, the Al Schottky barriers become near ohmic when crystalline Si is formed.

Original languageEnglish (US)
Pages (from-to)250-263
Number of pages14
JournalSurface Science
Volume132
Issue number1-3
DOIs
StatePublished - Sep 2 1983
Externally publishedYes

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Silicides
Crystallization
Electric properties
silicides
Crystalline materials
electrical properties
crystallization
Structural properties
Metals
electric contacts
causes
metals

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Schottky barrier amorphous-crystalline interface formation. / Thompson, Malcolm J.; Nemanich, Robert; Chuang Chuang Tsai, Chuang Tsai.

In: Surface Science, Vol. 132, No. 1-3, 02.09.1983, p. 250-263.

Research output: Contribution to journalArticle

Thompson, Malcolm J. ; Nemanich, Robert ; Chuang Chuang Tsai, Chuang Tsai. / Schottky barrier amorphous-crystalline interface formation. In: Surface Science. 1983 ; Vol. 132, No. 1-3. pp. 250-263.
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