The role of polar interface phonon scattering in determining mobility has been studied in inversion layers of MOS structures on InAs and Si. The comparison between mobility measurements and transport calculations is shown to provide an alternative method for determining interface properties. Transport at the Si/SO//2 interface is found to be dominated by several scattering mechanisms at various inversion densities. However, transport at the InAs/oxide interface is dominated entirely by surface roughness, because of the larger interface widths in this system. Interface phonon contributions are small.
|Original language||English (US)|
|Number of pages||4|
|Journal||Journal of vacuum science & technology|
|State||Published - Jan 1 1980|
|Event||Proc of the Annu Conf on the Phys of Compd Semicond Interfaces, 7th - Estes Park, CO, USA|
Duration: Jan 29 1980 → Jan 31 1980
ASJC Scopus subject areas