SCATTERING OF INVERSION LAYER ELECTRONS BY OXIDE POLAR MODE GENERATED INTERFACE PHONONS.

B. T. Moore, D. K. Ferry

Research output: Contribution to journalConference articlepeer-review

28 Scopus citations

Abstract

The role of polar interface phonon scattering in determining mobility has been studied in inversion layers of MOS structures on InAs and Si. The comparison between mobility measurements and transport calculations is shown to provide an alternative method for determining interface properties. Transport at the Si/SO//2 interface is found to be dominated by several scattering mechanisms at various inversion densities. However, transport at the InAs/oxide interface is dominated entirely by surface roughness, because of the larger interface widths in this system. Interface phonon contributions are small.

Original languageEnglish (US)
Pages (from-to)1037-1040
Number of pages4
JournalJournal of vacuum science & technology
Volume17
Issue number5
DOIs
StatePublished - Jan 1 1980
EventProc of the Annu Conf on the Phys of Compd Semicond Interfaces, 7th - Estes Park, CO, USA
Duration: Jan 29 1980Jan 31 1980

ASJC Scopus subject areas

  • Engineering(all)

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