Scattering of Å-scale electron probes in silicon

Christian Dwyer, J. Etheridge

Research output: Contribution to journalArticle

73 Citations (Scopus)

Abstract

We use frozen phonon multislice calculations to examine the scattering behaviour of Å-scale electron probes in 〈001〉 and 〈110〉 silicon. For each crystal orientation, we consider the distribution of scattered intensity in real space as a function of crystal thickness, probe size and probe position. The scattered intensity distribution is found to vary drastically for different probe sizes. For a given probe size, the scattered intensity distribution is also significantly influenced by the crystal orientation. We discuss the implications for the simultaneous acquisition of an annular dark-field image and electron energy loss spectra in the scanning transmission electron microscope, with specific reference to the spatial resolution with which electron energy loss spectra can be related to local atomic structure.

Original languageEnglish (US)
Pages (from-to)343-360
Number of pages18
JournalUltramicroscopy
Volume96
Issue number3-4
DOIs
StatePublished - Sep 2003
Externally publishedYes

Fingerprint

electron probes
Silicon
Scattering
Electrons
probes
silicon
scattering
energy dissipation
Crystal orientation
electron energy
crystals
Energy dissipation
atomic structure
acquisition
electron microscopes
spatial resolution
Electron microscopes
scanning
Scanning
Crystals

Keywords

  • Electron energy loss spectroscopy
  • Image simulation
  • Scanning transmission electron microscopy

ASJC Scopus subject areas

  • Materials Science(all)
  • Instrumentation

Cite this

Scattering of Å-scale electron probes in silicon. / Dwyer, Christian; Etheridge, J.

In: Ultramicroscopy, Vol. 96, No. 3-4, 09.2003, p. 343-360.

Research output: Contribution to journalArticle

Dwyer, Christian ; Etheridge, J. / Scattering of Å-scale electron probes in silicon. In: Ultramicroscopy. 2003 ; Vol. 96, No. 3-4. pp. 343-360.
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