Abstract
We review the topic of scanning tunneling microscopy (STM) studies of silicides, with an emphasis on fundamental scientific issues that can be addressed using STM and ballistic-electron-emission microscopy (BEEM). The discussion is organized according to the topics of structure (atomic scale precursors, surface reconstructions, bulk structures, interfaces) kinetics and growth (direct atomic measurement, modelling, stoichiometry, layer and island growth, phase transitions and nanoscale metallization) and BEEM (method, band structure, Schottky barrier, defect scattering, inelastic scattering and surface effects). These topics are described in general terms, then elaborated with specific examples.
| Original language | English (US) |
|---|---|
| Pages (from-to) | R71-R87 |
| Journal | Journal of Physics D: Applied Physics |
| Volume | 32 |
| Issue number | 15 |
| DOIs | |
| State | Published - Aug 7 1999 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Acoustics and Ultrasonics
- Surfaces, Coatings and Films