Scanning tunneling spectroscopy of methyl- and ethyl-terminated Si(111) surfaces

Hongbin Yu; Lauren J. Webb; James R. Heath; Nathan S. Lewis

doi:10.1063/1.2203968

Scanning tunneling spectroscopy of methyl- and ethyl-terminated Si(111) surfaces

Hongbin Yu, Lauren J. Webb, James R. Heath, Nathan S. Lewis

Research output: Contribution to journal › Article › peer-review

48 Scopus citations

Abstract

Methyl- and ethyl-terminated Si(111) surfaces prepared by a two-step chlorination/alkylation method were characterized by low temperature scanning tunneling spectroscopy (STS), The STS data showed remarkably low levels of midgap states on the CH ₃- and C ₂H ₅-terminated Si surfaces. A large conductance gap relative to the Si band gap was observed for both surfaces as well as for the hydrogen-terminated Si(111) surface. This large gap is ascribed to scanning tunneling microscope tip-induced band bending resulting from a low density of midgap states which avoid pinning of the Fermi levels on these passivated surfaces.

Original language	English (US)
Article number	252111
Journal	Applied Physics Letters
Volume	88
Issue number	25
DOIs	https://doi.org/10.1063/1.2203968
State	Published - Jun 19 2006
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Scanning tunneling spectroscopy of methyl- and ethyl-terminated Si(111) surfaces",

abstract = "Methyl- and ethyl-terminated Si(111) surfaces prepared by a two-step chlorination/alkylation method were characterized by low temperature scanning tunneling spectroscopy (STS), The STS data showed remarkably low levels of midgap states on the CH 3- and C 2H 5-terminated Si surfaces. A large conductance gap relative to the Si band gap was observed for both surfaces as well as for the hydrogen-terminated Si(111) surface. This large gap is ascribed to scanning tunneling microscope tip-induced band bending resulting from a low density of midgap states which avoid pinning of the Fermi levels on these passivated surfaces.",

author = "Hongbin Yu and Webb, {Lauren J.} and Heath, {James R.} and Lewis, {Nathan S.}",

note = "Funding Information: The authors acknowledge the National Science Foundation, Grant Nos. CHE-0213589 (NSL) and NSF-CCF-05204490, and the MARCO Materials Structures and Devices Focus Center (JRH) for support of this research. One of the authors (L.J.W.) thanks the NSF for a graduate fellowship. The authors thank Peigen Cao for helpful discussions and technical assistance. ",

year = "2006",

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doi = "10.1063/1.2203968",

language = "English (US)",

volume = "88",

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T1 - Scanning tunneling spectroscopy of methyl- and ethyl-terminated Si(111) surfaces

AU - Yu, Hongbin

AU - Webb, Lauren J.

AU - Heath, James R.

AU - Lewis, Nathan S.

N1 - Funding Information: The authors acknowledge the National Science Foundation, Grant Nos. CHE-0213589 (NSL) and NSF-CCF-05204490, and the MARCO Materials Structures and Devices Focus Center (JRH) for support of this research. One of the authors (L.J.W.) thanks the NSF for a graduate fellowship. The authors thank Peigen Cao for helpful discussions and technical assistance.

PY - 2006/6/19

Y1 - 2006/6/19

N2 - Methyl- and ethyl-terminated Si(111) surfaces prepared by a two-step chlorination/alkylation method were characterized by low temperature scanning tunneling spectroscopy (STS), The STS data showed remarkably low levels of midgap states on the CH 3- and C 2H 5-terminated Si surfaces. A large conductance gap relative to the Si band gap was observed for both surfaces as well as for the hydrogen-terminated Si(111) surface. This large gap is ascribed to scanning tunneling microscope tip-induced band bending resulting from a low density of midgap states which avoid pinning of the Fermi levels on these passivated surfaces.

AB - Methyl- and ethyl-terminated Si(111) surfaces prepared by a two-step chlorination/alkylation method were characterized by low temperature scanning tunneling spectroscopy (STS), The STS data showed remarkably low levels of midgap states on the CH 3- and C 2H 5-terminated Si surfaces. A large conductance gap relative to the Si band gap was observed for both surfaces as well as for the hydrogen-terminated Si(111) surface. This large gap is ascribed to scanning tunneling microscope tip-induced band bending resulting from a low density of midgap states which avoid pinning of the Fermi levels on these passivated surfaces.

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Scanning tunneling spectroscopy of methyl- and ethyl-terminated Si(111) surfaces

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