Scanning tunneling microscopy studies of Si donors (SiGa) in GaAs

J. F. Zheng, X. Liu, Nathan Newman, E. R. Weber, D. F. Ogletree, M. Salmeron

Research output: Contribution to journalArticle

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Abstract

We report scanning tunneling microscopy (STM) studies of Si substitutional donors (SiGa) in GaAs that reveal delocalized and localized electronic features corresponding to SiGa in the top few layers of the (110) cleavage surface. The delocalized features appear as protrusions a few nm in size, superimposed on the background lattice. These features are attributed to enhanced tunneling due to the local perturbation of the band bending by the Coulomb potential of subsurface SiGa. In contrast, STM images of surface SiGa show very localized electronic structures, in good agreement with a recent theoretical prediction [J. Wang et al., Phys. Rev. B 47, 10 329 (1993)].

Original languageEnglish (US)
Pages (from-to)1490-1493
Number of pages4
JournalPhysical Review Letters
Volume72
Issue number10
DOIs
StatePublished - 1994
Externally publishedYes

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scanning tunneling microscopy
Coulomb potential
cleavage
electronic structure
perturbation
predictions
electronics

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Zheng, J. F., Liu, X., Newman, N., Weber, E. R., Ogletree, D. F., & Salmeron, M. (1994). Scanning tunneling microscopy studies of Si donors (SiGa) in GaAs. Physical Review Letters, 72(10), 1490-1493. https://doi.org/10.1103/PhysRevLett.72.1490

Scanning tunneling microscopy studies of Si donors (SiGa) in GaAs. / Zheng, J. F.; Liu, X.; Newman, Nathan; Weber, E. R.; Ogletree, D. F.; Salmeron, M.

In: Physical Review Letters, Vol. 72, No. 10, 1994, p. 1490-1493.

Research output: Contribution to journalArticle

Zheng, JF, Liu, X, Newman, N, Weber, ER, Ogletree, DF & Salmeron, M 1994, 'Scanning tunneling microscopy studies of Si donors (SiGa) in GaAs', Physical Review Letters, vol. 72, no. 10, pp. 1490-1493. https://doi.org/10.1103/PhysRevLett.72.1490
Zheng, J. F. ; Liu, X. ; Newman, Nathan ; Weber, E. R. ; Ogletree, D. F. ; Salmeron, M. / Scanning tunneling microscopy studies of Si donors (SiGa) in GaAs. In: Physical Review Letters. 1994 ; Vol. 72, No. 10. pp. 1490-1493.
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