Scanning tunneling microscopy studies of semiconductor electrochemistry

T. Thundat, L. A. Nagahara, Stuart Lindsay

Research output: Contribution to journalArticlepeer-review

38 Scopus citations

Abstract

We have used scanning tunneling microscopy to investigate topographical changes on potentiostatically controlled semiconductor surfaces due to electrochemical reactions. The electrochemical processes reported here include Ni deposition on Ge (111), localized photoelectrodeposition of gold on GaAs(100) surfaces, and photocorrosion of GaAs. We have also carried out x-ray photoelectron spectroscopy and secondary electron microscopy studies on samples that have been imaged with scanning tunneling microscopy.

Original languageEnglish (US)
Pages (from-to)539-543
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume8
Issue number1
DOIs
StatePublished - 1990

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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