Scanning tunneling microscopy studies of semiconductor electrochemistry

T. Thundat, L. A. Nagahara, Stuart Lindsay

Research output: Contribution to journalArticle

38 Citations (Scopus)

Abstract

We have used scanning tunneling microscopy to investigate topographical changes on potentiostatically controlled semiconductor surfaces due to electrochemical reactions. The electrochemical processes reported here include Ni deposition on Ge (111), localized photoelectrodeposition of gold on GaAs(100) surfaces, and photocorrosion of GaAs. We have also carried out x-ray photoelectron spectroscopy and secondary electron microscopy studies on samples that have been imaged with scanning tunneling microscopy.

Original languageEnglish (US)
Pages (from-to)539-543
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume8
Issue number1
DOIs
StatePublished - 1990

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Scanning tunneling microscopy
Electrochemistry
electrochemistry
scanning tunneling microscopy
Semiconductor materials
Photoelectron spectroscopy
Gold
x ray spectroscopy
Electron microscopy
electron microscopy
photoelectron spectroscopy
gold
X rays
gallium arsenide

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Scanning tunneling microscopy studies of semiconductor electrochemistry. / Thundat, T.; Nagahara, L. A.; Lindsay, Stuart.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 8, No. 1, 1990, p. 539-543.

Research output: Contribution to journalArticle

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