Scanning tunneling microscopy of Si donors in GaAs

Jun Fei Zheng, X. Liu, Nathan Newman, E. R. Weber, D. F. Ogletree, M. B. Salmeron

Research output: Chapter in Book/Report/Conference proceedingChapter

3 Scopus citations

Abstract

Using scanning tunneling microscopy, we have identified and characterized Si donors (Si Ga) in GaAs located on the (110) surface and in subsurface layers. Si Ga on the surface shows localized features with characteristic structures in good agreement with a recent theoretical calculation. Si Ga in subsurface layers appears as delocalized protrusions superimposed on thebackground lattice, which are interpreted in terms of the modification of the tunneling due to the tip-induced band bending perturbed by the Si Ga Coulomb potential.

Original languageEnglish (US)
Title of host publicationMaterials Science Forum
PublisherTrans Tech Publ
Pages1319-1324
Number of pages6
Volume143-4
Editionpt 3
StatePublished - 1994
Externally publishedYes
EventProceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3) - Gmunden, Austria
Duration: Jul 18 1993Jul 23 1993

Other

OtherProceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3)
CityGmunden, Austria
Period7/18/937/23/93

ASJC Scopus subject areas

  • Materials Science(all)

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