Abstract
Using scanning tunneling microscopy, we have identified and characterized Si donors (Si Ga) in GaAs located on the (110) surface and in subsurface layers. Si Ga on the surface shows localized features with characteristic structures in good agreement with a recent theoretical calculation. Si Ga in subsurface layers appears as delocalized protrusions superimposed on thebackground lattice, which are interpreted in terms of the modification of the tunneling due to the tip-induced band bending perturbed by the Si Ga Coulomb potential.
Original language | English (US) |
---|---|
Title of host publication | Materials Science Forum |
Publisher | Trans Tech Publ |
Pages | 1319-1324 |
Number of pages | 6 |
Volume | 143-4 |
Edition | pt 3 |
State | Published - 1994 |
Externally published | Yes |
Event | Proceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3) - Gmunden, Austria Duration: Jul 18 1993 → Jul 23 1993 |
Other
Other | Proceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3) |
---|---|
City | Gmunden, Austria |
Period | 7/18/93 → 7/23/93 |
ASJC Scopus subject areas
- General Materials Science