Scanning tunneling microscopy of Si donors in GaAs

Jun Fei Zheng, X. Liu, Nathan Newman, E. R. Weber, D. F. Ogletree, M. B. Salmeron

Research output: Chapter in Book/Report/Conference proceedingChapter

3 Citations (Scopus)

Abstract

Using scanning tunneling microscopy, we have identified and characterized Si donors (Si Ga) in GaAs located on the (110) surface and in subsurface layers. Si Ga on the surface shows localized features with characteristic structures in good agreement with a recent theoretical calculation. Si Ga in subsurface layers appears as delocalized protrusions superimposed on thebackground lattice, which are interpreted in terms of the modification of the tunneling due to the tip-induced band bending perturbed by the Si Ga Coulomb potential.

Original languageEnglish (US)
Title of host publicationMaterials Science Forum
PublisherTrans Tech Publ
Pages1319-1324
Number of pages6
Volume143-4
Editionpt 3
StatePublished - 1994
Externally publishedYes
EventProceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3) - Gmunden, Austria
Duration: Jul 18 1993Jul 23 1993

Other

OtherProceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3)
CityGmunden, Austria
Period7/18/937/23/93

Fingerprint

Scanning tunneling microscopy
gallium arsenide

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Zheng, J. F., Liu, X., Newman, N., Weber, E. R., Ogletree, D. F., & Salmeron, M. B. (1994). Scanning tunneling microscopy of Si donors in GaAs. In Materials Science Forum (pt 3 ed., Vol. 143-4, pp. 1319-1324). Trans Tech Publ.

Scanning tunneling microscopy of Si donors in GaAs. / Zheng, Jun Fei; Liu, X.; Newman, Nathan; Weber, E. R.; Ogletree, D. F.; Salmeron, M. B.

Materials Science Forum. Vol. 143-4 pt 3. ed. Trans Tech Publ, 1994. p. 1319-1324.

Research output: Chapter in Book/Report/Conference proceedingChapter

Zheng, JF, Liu, X, Newman, N, Weber, ER, Ogletree, DF & Salmeron, MB 1994, Scanning tunneling microscopy of Si donors in GaAs. in Materials Science Forum. pt 3 edn, vol. 143-4, Trans Tech Publ, pp. 1319-1324, Proceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3), Gmunden, Austria, 7/18/93.
Zheng JF, Liu X, Newman N, Weber ER, Ogletree DF, Salmeron MB. Scanning tunneling microscopy of Si donors in GaAs. In Materials Science Forum. pt 3 ed. Vol. 143-4. Trans Tech Publ. 1994. p. 1319-1324
Zheng, Jun Fei ; Liu, X. ; Newman, Nathan ; Weber, E. R. ; Ogletree, D. F. ; Salmeron, M. B. / Scanning tunneling microscopy of Si donors in GaAs. Materials Science Forum. Vol. 143-4 pt 3. ed. Trans Tech Publ, 1994. pp. 1319-1324
@inbook{a7b5fe5d766c42d3bca98288e21f9560,
title = "Scanning tunneling microscopy of Si donors in GaAs",
abstract = "Using scanning tunneling microscopy, we have identified and characterized Si donors (Si Ga) in GaAs located on the (110) surface and in subsurface layers. Si Ga on the surface shows localized features with characteristic structures in good agreement with a recent theoretical calculation. Si Ga in subsurface layers appears as delocalized protrusions superimposed on thebackground lattice, which are interpreted in terms of the modification of the tunneling due to the tip-induced band bending perturbed by the Si Ga Coulomb potential.",
author = "Zheng, {Jun Fei} and X. Liu and Nathan Newman and Weber, {E. R.} and Ogletree, {D. F.} and Salmeron, {M. B.}",
year = "1994",
language = "English (US)",
volume = "143-4",
pages = "1319--1324",
booktitle = "Materials Science Forum",
publisher = "Trans Tech Publ",
edition = "pt 3",

}

TY - CHAP

T1 - Scanning tunneling microscopy of Si donors in GaAs

AU - Zheng, Jun Fei

AU - Liu, X.

AU - Newman, Nathan

AU - Weber, E. R.

AU - Ogletree, D. F.

AU - Salmeron, M. B.

PY - 1994

Y1 - 1994

N2 - Using scanning tunneling microscopy, we have identified and characterized Si donors (Si Ga) in GaAs located on the (110) surface and in subsurface layers. Si Ga on the surface shows localized features with characteristic structures in good agreement with a recent theoretical calculation. Si Ga in subsurface layers appears as delocalized protrusions superimposed on thebackground lattice, which are interpreted in terms of the modification of the tunneling due to the tip-induced band bending perturbed by the Si Ga Coulomb potential.

AB - Using scanning tunneling microscopy, we have identified and characterized Si donors (Si Ga) in GaAs located on the (110) surface and in subsurface layers. Si Ga on the surface shows localized features with characteristic structures in good agreement with a recent theoretical calculation. Si Ga in subsurface layers appears as delocalized protrusions superimposed on thebackground lattice, which are interpreted in terms of the modification of the tunneling due to the tip-induced band bending perturbed by the Si Ga Coulomb potential.

UR - http://www.scopus.com/inward/record.url?scp=0028590265&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028590265&partnerID=8YFLogxK

M3 - Chapter

AN - SCOPUS:0028590265

VL - 143-4

SP - 1319

EP - 1324

BT - Materials Science Forum

PB - Trans Tech Publ

ER -