Scanning tunneling microscopy of cubic silicon carbide surfaces

N. J. Zheng, U. Knipping, I. S T Tsong, William Petuskey, H. S. Kong, R. F. Davis

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

Surface topographies of n-type /?-SiC single crystals epitaxially grown by chemical vapor deposition on Si(100) and Si substrates inclined at 4° off (100) toward (011) were imaged by a scanning tunneling microscope. The images suggest that smooth surfaces can be achieved by epitaxial growth on the 4°-off substrates. Oxidation of the β-SiC surfaces followed by chemical etching to remove the oxide layer also tend to produce smooth surfaces.

Original languageEnglish (US)
Pages (from-to)696-698
Number of pages3
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume6
Issue number3
DOIs
StatePublished - May 1988

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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