Scanning tunneling microscopy of cubic silicon carbide surfaces

N. J. Zheng; U. Knipping; I. S T Tsong; William Petuskey; H. S. Kong; R. F. Davis

doi:10.1116/1.575156

Scanning tunneling microscopy of cubic silicon carbide surfaces

N. J. Zheng, U. Knipping, I. S T Tsong, William Petuskey, H. S. Kong, R. F. Davis

Molecular Sciences, School of (SMS)

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Surface topographies of n-type /?-SiC single crystals epitaxially grown by chemical vapor deposition on Si(100) and Si substrates inclined at 4° off (100) toward (011) were imaged by a scanning tunneling microscope. The images suggest that smooth surfaces can be achieved by epitaxial growth on the 4°-off substrates. Oxidation of the β-SiC surfaces followed by chemical etching to remove the oxide layer also tend to produce smooth surfaces.

Original language	English (US)
Pages (from-to)	696-698
Number of pages	3
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	6
Issue number	3
DOIs	https://doi.org/10.1116/1.575156
State	Published - May 1988

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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@article{423142b1daee4c6696ff114d00c59b24,

title = "Scanning tunneling microscopy of cubic silicon carbide surfaces",

abstract = "Surface topographies of n-type /?-SiC single crystals epitaxially grown by chemical vapor deposition on Si(100) and Si substrates inclined at 4° off (100) toward (011) were imaged by a scanning tunneling microscope. The images suggest that smooth surfaces can be achieved by epitaxial growth on the 4°-off substrates. Oxidation of the β-SiC surfaces followed by chemical etching to remove the oxide layer also tend to produce smooth surfaces.",

author = "Zheng, {N. J.} and U. Knipping and Tsong, {I. S T} and William Petuskey and Kong, {H. S.} and Davis, {R. F.}",

year = "1988",

month = may,

doi = "10.1116/1.575156",

language = "English (US)",

volume = "6",

pages = "696--698",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

number = "3",

}

TY - JOUR

T1 - Scanning tunneling microscopy of cubic silicon carbide surfaces

AU - Zheng, N. J.

AU - Knipping, U.

AU - Tsong, I. S T

AU - Petuskey, William

AU - Kong, H. S.

AU - Davis, R. F.

PY - 1988/5

Y1 - 1988/5

N2 - Surface topographies of n-type /?-SiC single crystals epitaxially grown by chemical vapor deposition on Si(100) and Si substrates inclined at 4° off (100) toward (011) were imaged by a scanning tunneling microscope. The images suggest that smooth surfaces can be achieved by epitaxial growth on the 4°-off substrates. Oxidation of the β-SiC surfaces followed by chemical etching to remove the oxide layer also tend to produce smooth surfaces.

AB - Surface topographies of n-type /?-SiC single crystals epitaxially grown by chemical vapor deposition on Si(100) and Si substrates inclined at 4° off (100) toward (011) were imaged by a scanning tunneling microscope. The images suggest that smooth surfaces can be achieved by epitaxial growth on the 4°-off substrates. Oxidation of the β-SiC surfaces followed by chemical etching to remove the oxide layer also tend to produce smooth surfaces.

UR - http://www.scopus.com/inward/record.url?scp=0004161782&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0004161782&partnerID=8YFLogxK

U2 - 10.1116/1.575156

DO - 10.1116/1.575156

M3 - Article

AN - SCOPUS:0004161782

SN - 0734-2101

VL - 6

SP - 696

EP - 698

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 3

ER -

Scanning tunneling microscopy of cubic silicon carbide surfaces

Abstract

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