Scanning tunneling microscopy and spectroscopy of wet-chemically prepared chlorinated Si(111) surfaces

Feigen Cao, Hongbin Yu, James R. Heath

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Chlorine-terminated Si(111) surfaces prepared through the wet-chemical treatment of H-terminated Si(111) surfaces with PCl5 (in chlorobenzene) were investigated using ultrahigh vacuum scanning tunneling microscopy (UHV cryo-STM) and tunneling spectroscopy. STM images, collected at 77 K, revealed an unreconstructed 1 × 1 structure for the chlorination layer, consistent with what has been observed for the gas phase chlorination of H-terminated Si(111). However, the wet-chemical chlorination is shown to generate etch pits in the Si-(111) surface, with an increase in etch pit density correlating with increasing PCl5 exposure temperatures. These etch pits were assumed to stabilize the edge structure through the partial removal of the 〈112̄〉 step edges. Tunneling spectroscopy revealed a nonzero density of states at zero bias. This is in contrast to the cases of H-, methyl-, or ethyl-terminated Si(111), in which similar measurements have revealed the presence of a large conductance gap.

Original languageEnglish (US)
Pages (from-to)23615-23618
Number of pages4
JournalJournal of Physical Chemistry B
Volume110
Issue number47
DOIs
StatePublished - Nov 30 2006

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chlorination
Chlorination
Scanning tunneling microscopy
scanning tunneling microscopy
Spectroscopy
spectroscopy
chlorobenzenes
Chlorine
Ultrahigh vacuum
ultrahigh vacuum
chlorine
Gases
vapor phases
Temperature
temperature

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry

Cite this

Scanning tunneling microscopy and spectroscopy of wet-chemically prepared chlorinated Si(111) surfaces. / Cao, Feigen; Yu, Hongbin; Heath, James R.

In: Journal of Physical Chemistry B, Vol. 110, No. 47, 30.11.2006, p. 23615-23618.

Research output: Contribution to journalArticle

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