Scanning probe investigation of surface charge and surface potential of GaN-based heterostructures

B. J. Rodriguez; W. C. Yang; R. J. Nemanich; A. Gruverman

doi:10.1063/1.1869535

Scanning probe investigation of surface charge and surface potential of GaN-based heterostructures

B. J. Rodriguez, W. C. Yang, R. J. Nemanich, A. Gruverman

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43 Scopus citations

Abstract

Scanning Kelvin probe microscopy (SKPM) and electrostatic force microscopy (EFM) have been employed to measure the surface potentials and the surface charge densities of the Ga- and the N-face of a GaN lateral polarity heterostructure (LPH). The surface was subjected to an HCl surface treatment to address the role of adsorbed charge on polarization screening. It has been found that while the Ga-face surface appears to be unaffected by the surface treatment, the N-face surface exhibited an increase in adsorbed screening charge density (1.6±0.5×10 ¹⁰ cm ^-2), and a reduction of 0.3±0.1 V in the surface potential difference between the N- and Ga-face surfaces.

Original language	English (US)
Article number	112115
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	11
DOIs	https://doi.org/10.1063/1.1869535
State	Published - Mar 14 2005
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1869535

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@article{6b8cacac93e0438293a51450a1c2e64e,

title = "Scanning probe investigation of surface charge and surface potential of GaN-based heterostructures",

abstract = "Scanning Kelvin probe microscopy (SKPM) and electrostatic force microscopy (EFM) have been employed to measure the surface potentials and the surface charge densities of the Ga- and the N-face of a GaN lateral polarity heterostructure (LPH). The surface was subjected to an HCl surface treatment to address the role of adsorbed charge on polarization screening. It has been found that while the Ga-face surface appears to be unaffected by the surface treatment, the N-face surface exhibited an increase in adsorbed screening charge density (1.6±0.5×10 10 cm -2), and a reduction of 0.3±0.1 V in the surface potential difference between the N- and Ga-face surfaces.",

author = "Rodriguez, {B. J.} and Yang, {W. C.} and Nemanich, {R. J.} and A. Gruverman",

note = "Funding Information: The authors thank Dr. R. Dmitrov and Dr. O. Ambacher for the LPH-GaN used in this study, Dr. S. V. Kalinin for assistance with modeling the tip sample capacitance, and E. N. Bryan for assistance with wet-chemical cleaning. This work was supported by grants through the Office of Naval Research MURI on Polarization Electronics Contract No. N00014-99-1-0729 and the National Science Foundation (Grant No. DMR-0235632).",

year = "2005",

month = mar,

day = "14",

doi = "10.1063/1.1869535",

language = "English (US)",

volume = "86",

pages = "1--3",

journal = "Applied Physics Letters",

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T1 - Scanning probe investigation of surface charge and surface potential of GaN-based heterostructures

AU - Rodriguez, B. J.

AU - Yang, W. C.

AU - Nemanich, R. J.

AU - Gruverman, A.

N1 - Funding Information: The authors thank Dr. R. Dmitrov and Dr. O. Ambacher for the LPH-GaN used in this study, Dr. S. V. Kalinin for assistance with modeling the tip sample capacitance, and E. N. Bryan for assistance with wet-chemical cleaning. This work was supported by grants through the Office of Naval Research MURI on Polarization Electronics Contract No. N00014-99-1-0729 and the National Science Foundation (Grant No. DMR-0235632).

PY - 2005/3/14

Y1 - 2005/3/14

N2 - Scanning Kelvin probe microscopy (SKPM) and electrostatic force microscopy (EFM) have been employed to measure the surface potentials and the surface charge densities of the Ga- and the N-face of a GaN lateral polarity heterostructure (LPH). The surface was subjected to an HCl surface treatment to address the role of adsorbed charge on polarization screening. It has been found that while the Ga-face surface appears to be unaffected by the surface treatment, the N-face surface exhibited an increase in adsorbed screening charge density (1.6±0.5×10 10 cm -2), and a reduction of 0.3±0.1 V in the surface potential difference between the N- and Ga-face surfaces.

AB - Scanning Kelvin probe microscopy (SKPM) and electrostatic force microscopy (EFM) have been employed to measure the surface potentials and the surface charge densities of the Ga- and the N-face of a GaN lateral polarity heterostructure (LPH). The surface was subjected to an HCl surface treatment to address the role of adsorbed charge on polarization screening. It has been found that while the Ga-face surface appears to be unaffected by the surface treatment, the N-face surface exhibited an increase in adsorbed screening charge density (1.6±0.5×10 10 cm -2), and a reduction of 0.3±0.1 V in the surface potential difference between the N- and Ga-face surfaces.

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DO - 10.1063/1.1869535

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

M1 - 112115

ER -

Scanning probe investigation of surface charge and surface potential of GaN-based heterostructures

Abstract

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