Scanning gate microscopy investigations on an InGaAs quantum point contact

Nobuyuki Aoki, Carlo R. Da Cunha, Richard Akis, David K. Ferry, Yuichi Ochiai

Research output: Contribution to journalArticle

36 Scopus citations

Abstract

In recent years, there has been interest in devices created on InGaAs due to the possibility of its use for spintronics. Nonetheless, this material is known for usually presenting some levels of disorder. We have used scanning gate microscopy to study the local potential for an in-plane gated InGaAs quantum point contact and succeeded in obtaining images corresponding to sites where same quantum interference conditions are maintained. Furthermore, we have visualized images of the local potential variations within the confined region near pinch-off condition.

Original languageEnglish (US)
Article number223501
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number22
DOIs
StatePublished - Nov 30 2005

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Aoki, N., Da Cunha, C. R., Akis, R., Ferry, D. K., & Ochiai, Y. (2005). Scanning gate microscopy investigations on an InGaAs quantum point contact. Applied Physics Letters, 87(22), 1-3. [223501]. https://doi.org/10.1063/1.2136408