Scanning gate microscopy investigations on an InGaAs quantum point contact

Nobuyuki Aoki; Carlo R. Da Cunha; Richard Akis; David K. Ferry; Yuichi Ochiai

doi:10.1063/1.2136408

Scanning gate microscopy investigations on an InGaAs quantum point contact

Nobuyuki Aoki, Carlo R. Da Cunha, Richard Akis, David K. Ferry, Yuichi Ochiai

Research output: Contribution to journal › Article › peer-review

39 Scopus citations

Abstract

In recent years, there has been interest in devices created on InGaAs due to the possibility of its use for spintronics. Nonetheless, this material is known for usually presenting some levels of disorder. We have used scanning gate microscopy to study the local potential for an in-plane gated InGaAs quantum point contact and succeeded in obtaining images corresponding to sites where same quantum interference conditions are maintained. Furthermore, we have visualized images of the local potential variations within the confined region near pinch-off condition.

Original language	English (US)
Article number	223501
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	22
DOIs	https://doi.org/10.1063/1.2136408
State	Published - 2005

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2136408

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title = "Scanning gate microscopy investigations on an InGaAs quantum point contact",

abstract = "In recent years, there has been interest in devices created on InGaAs due to the possibility of its use for spintronics. Nonetheless, this material is known for usually presenting some levels of disorder. We have used scanning gate microscopy to study the local potential for an in-plane gated InGaAs quantum point contact and succeeded in obtaining images corresponding to sites where same quantum interference conditions are maintained. Furthermore, we have visualized images of the local potential variations within the confined region near pinch-off condition.",

author = "Nobuyuki Aoki and {Da Cunha}, {Carlo R.} and Richard Akis and Ferry, {David K.} and Yuichi Ochiai",

note = "Funding Information: The authors would like to thank A. Beyer and R. Shishir for help in sample preparation, and S. M. Goodnick, and J. Sm{\"o}liner for many helpful discussions, as well as for the hospitality of the group at the Technical University of Vienna during visits of C. R. Da Cunha. This work was supported by the Office of Naval Research; N. Aoki is supported by JSPS Postdoctoral Fellowships for Research Abroad 2004.",

year = "2005",

doi = "10.1063/1.2136408",

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T1 - Scanning gate microscopy investigations on an InGaAs quantum point contact

AU - Aoki, Nobuyuki

AU - Da Cunha, Carlo R.

AU - Akis, Richard

AU - Ferry, David K.

AU - Ochiai, Yuichi

N1 - Funding Information: The authors would like to thank A. Beyer and R. Shishir for help in sample preparation, and S. M. Goodnick, and J. Smöliner for many helpful discussions, as well as for the hospitality of the group at the Technical University of Vienna during visits of C. R. Da Cunha. This work was supported by the Office of Naval Research; N. Aoki is supported by JSPS Postdoctoral Fellowships for Research Abroad 2004.

PY - 2005

Y1 - 2005

N2 - In recent years, there has been interest in devices created on InGaAs due to the possibility of its use for spintronics. Nonetheless, this material is known for usually presenting some levels of disorder. We have used scanning gate microscopy to study the local potential for an in-plane gated InGaAs quantum point contact and succeeded in obtaining images corresponding to sites where same quantum interference conditions are maintained. Furthermore, we have visualized images of the local potential variations within the confined region near pinch-off condition.

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Scanning gate microscopy investigations on an InGaAs quantum point contact

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